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US 2004/0169186 A1Published application
III group nitride system compound semiconductor light emitting element
AssigneeToyoda Gosei Co., Ltd.
InventorsNaoki Shibata, Takahiro Kozawa
Life of this patent
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Abstract
A III group nitride system compound semiconductor light emitting element has a quantum well structure that includes a well layer of AlX1GaY1In1−X1−Y1N, where 0<X1, 0≦Y1 and X1+Y1<1 and a barrier layer of AlX2GaY2In1−X2−Y2N, where 0<X2, 0≦Y2 and X2+Y2<1. The Al composition (X2) of barrier layer is equal to or smaller than that (X1) of well layer.
Claims8
A III group nitride system compound semiconductor light emitting element, comprising:
- a quantum well structure that includes a well layer of AlX1GaY1In1−X1−Y1N, where 0<X1, 0≦Y1 and X1+Y1<1 and a barrier layer of AlX2GaY2In1−X2−Y2N, where 0<X2, 0≦Y2 and X2+Y2≦1,
- wherein the Al composition (X2) of said barrier layer is equal to or smaller than that (X1) of said well layer.
A III group nitride system compound semiconductor light emitting element, comprising:
- a quantum well structure that includes a well layer of AlX1GaY1In1−X1−Y1N, where 0<X1, 0≦Y1 and X1+Y1<1 and a barrier layer of AlX2GaY2In1−X2−Y2N, where 0<X2, 0≦Y2 and X2+Y2<1,
- wherein the Al composition (X2) of said barrier layer is equal to or smaller than that (X1) of said well layer, and the In composition of said well layer is greater than that of said barrier layer.
Dependencies are inferred from the claim text.