Boron phosphide-based semiconductor light-emitting device, production method thereof and light-emitting diode

A method for producing a boron phosphide-based semiconductor light-emitting device, the method including forming a light-emitting member having a hetero-junction structure in which an n-type lower cladding layer composed of an n-type compound semiconductor, an n-type light-emitting layer composed of an n-type Group III nitride semiconductor, and a p-type upper cladding layer composed of a p-type boron phosphide-based semiconductor and provided on the light-emitting layer are sequentially provided on a surface of a conductive or high-resistive single-crystal substrate, and forming a p-type Ohmic electrode so as to achieve contact with the p-type upper cladding layer, characterized in that the method comprises forming an amorphous layer composed of a boron phosphide-based semiconductor on the n-type light-emitting layer through a vapor phase growth method, and forming the p-type upper cladding layer composed of a p-type boron phosphide-based semiconductor layer on the amorphous layer through a vapor phase growth method.

A method for producing a boron phosphide-based semiconductor light-emitting device, the method including forming a light-emitting member having a hetero-junction structure in which an n-type lower cladding layer composed of an n-type compound semiconductor, an n-type light-emitting layer composed of an n-type Group III nitride semiconductor, and a p-type upper cladding layer composed of a p-type boron phosphide-based semiconductor and provided on the light-emitting layer are sequentially provided on a surface of a conductive or high-resistive single-crystal substrate, and forming a p-type Ohmic electrode so as to achieve contact with the p-type upper cladding layer, characterized in that the method comprises forming a first amorphous layer composed of boron phosphide-based semiconductor on the n-type light-emitting layer through a vapor phase growth method;

• forming a second amorphous layer composed of amorphous p-type boron phosphide-based semiconductor having a carrier concentration higher than that of the first amorphous layer through a vapor phase growth method such that the second amorphous layer is joined to the first amorphous layer;
• and forming the p-type upper cladding layer composed of a p-type boron phosphide-based semiconductor layer through a vapor phase growth method such that the upper cladding layer is joined to the second amorphous layer.