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US 2004/0169182 A1Published application
Flat panel display and fabrication method thereof
AssigneeSamsung SDI Co., Ltd.
InventorsJae Bon Koo, Sang-Il Park
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AssigneeSamsung SDI Co., Ltd.
InventorsJae Bon Koo, Sang-Il Park
Estimating the term…
A flat panel display with a plurality of pixels. Each pixel has at least a first transistor and a second transistor and a semiconductor layer of the first transistor has a mobility which is different from a semiconductor layer of the second transistor. A method for fabricating a flat panel display including at least a first transistor and a second transistor by forming an amorphous silicon film on an insulating substrate and crystallizing the amorphous silicon film into a polysilicon film that is divided into at least a first region having a first mobility and a second region having a second mobility. The method further involves forming a semiconductor layer for the first transistor from the region with the first mobility and the second transistor from the region with the second mobility by patterning the polysilicon film, where the first mobility is different from the second mobility.
A flat panel display comprising a plurality of pixels, each pixel including at least a first transistor and a second transistor, wherein a semiconductor layer of the first transistor has a mobility which is different from a semiconductor layer of the second transistor.
A flat panel display comprising a plurality of pixels, each of the pixels including a first transistor and a second transistor, wherein a semiconductor layer of the first transistor has a crystal structure which is different from a crystal structure of the second transistor.
A method for fabricating a flat panel display including at least a first transistor and a second transistor, comprising the steps of:
A method for fabricating a flat panel display including a first transistor and a second transistor, the method comprising:
21 The method for fabricating a flat panel display according to claim 20, further comprising using the second semiconductor layer to fabricate the second transistor and the second semiconductor layer comprises at least a portion of the polysilicon film.
A flat panel display comprising R, G and B unit pixels, wherein at least one unit pixel in the R, G and B unit pixels includes a first transistor and a second transistor, where the first transistor having a first semiconductor layer and the second transistor having a second semiconductor layer and a mobility of the first semiconductor layer is different from a mobility of the second semiconductor layer.
A flat panel display comprising R, G and B unit pixels, wherein at least one unit pixel in R, G and B unit pixels includes at least a first transistor and a second transistor, wherein the first transistor comprises a first semiconductor layer having a different crystal structure than a crystal structure of a second semiconductor layer of the second transistor.
Dependencies are inferred from the claim text.