Semiconductor substrate for optoelectronic components and method for fabricating it
AssigneeOSRAM Opto Semiconductors GmbH
InventorVolker Harle
Life of this patent
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Abstract
In a semiconductor substrate (1), impurity material, for example a metal, is distributed in a layer-like zone (3) in such a way that said zone reflects radiation (6), which is generated or detected by an optoelectronic component, for example. Said layer-like zone (3) is fabricated by implantation of the impurity material into the substrate (1) and subsequent heat treatment for crystallization of the impurity material. Such a substrate is suitable in particular for avoiding the penetration of radiation (6), which is generated for example by radiation-emitting structures (5) applied to the substrate, by reflection in a region of the substrate (1) near the surface and thus for reducing the absorption losses.
Claims19
A semiconductor substrate (1), comprising:
- a reflective layer-like zone (3) formed in the semiconductor substrate (1), and
- impurity material in said zone of the semiconductor substrate (1) and distributed in layer-like fashion therein.
A method for fabricating a semiconductor substrate (1) comprising:
- implanting impurity material into the substrate (1), and
- forming a reflective layer-like zone (3) in the semiconductor substrate containing said impurity material.
Dependencies are inferred from the claim text.