Back to results
US 2004/0169178 A1Published application
Diamond semiconductor and diamond semiconductor light-emitting device that uses the semiconductor
AssigneeAgency of Ind Sci & Tech Min of Int'l Trade & Ind
InventorsHideyo Okushi, Hideyuki Watanabe, Daisuke Takeuchi, Koji Kajimura
Life of this patent
Estimating the term…
Abstract
A diamond semiconductor has an exciton light-emission intensity characteristic that varies nonlinearly.
Claims10
Diamond semiconductor having an exciton light-emission intensity characteristic that varies nonlinearly.
A diamond semiconductor light-emitting device comprising:
- an n-type diamond semiconductor layer,
- a p-type diamond semiconductor layer formed while maintaining a predetermined interval between it and said n-type diamond semiconductor layer, and
- a high-quality undoped diamond semiconductor layer sandwiched between said n-type diamond semiconductor layer and said p-type diamond semiconductor layer,
- wherein an exciton light emission that varies nonlinearly according to a current value is output from said undoped diamond semiconductor layer when current is injected to respective electrodes formed on said n-type and p-type diamond semiconductor layers.
1 more element
A diamond semiconductor light-emitting device comprising:
- a high-quality n-type diamond semiconductor layer,
- a high-quality p-type diamond semiconductor layer formed in contact with said n-type diamond semiconductor layer, and
- an activation region layer formed in an interface between said n-type diamond semiconductor layer and said p-type diamond semiconductor layer,
- wherein an exciton light emission that varies nonlinearly according to a current value is output from the activation region layer when current is injected to respective electrodes formed on said n-type and p-type diamond semiconductor layers.
1 more element
Dependencies are inferred from the claim text.