Semiconductor device and method of manufacturing the same

A semiconductor device, wherein:

• a semiconductor film has a polycrystal structure with the composition ratio of germanium to silicon being 0.1 atomic percent or more and 10 atomic percent or below,
• the {101} plane in the semiconductor film reaches 30% or more of all the lattice planes detected by Electron backscatter diffraction;
• and
• the semiconductor film contains less than 5×1018 nitrogen atoms per cm3, less than 5×1018 carbon atoms per cm3, and less than 1×1019 oxygen atoms per cm3.

A semiconductor device, wherein:

• a semiconductor film has a polycrystal structure with the composition ratio of germanium to silicon being 0.1 atomic percent or more and 10 atomic percent or below;
• the {101} plane in the semiconductor film reaches 30% or more of all the lattice planes detected by Electron backscatter diffraction;
• and
• the semiconductor film is obtained by crystallizing an amorphous semiconductor film formed by intermittent electric discharge while setting the repetition frequency to 10 kHz or below and the duty ratio to 50% or below.

A semiconductor device, wherein:

• a semiconductor film has a polycrystal structure with the composition ratio of germanium to silicon being 0.1 atomic percent or more and 10 atomic percent or below:
• the {101} plane in the semiconductor film reaches 30% or more of all the lattice planes detected by Electron backscatter diffraction;
• the semiconductor film contains less than 5×1018 nitrogen atoms per cm3, less than 5×1018 carbon atoms per cm3, and less than 1×1019 oxygen atoms per cm3 and
• the semiconductor film is obtained by crystallizing an amorphous semiconductor film formed by intermittent electric discharge while setting the repetition frequency to 10 kHz or below and the duty ratio to 50% or below.

A method of manufacturing a semiconductor device comprising the steps of:

• forming an amorphous semiconductor film by plasma CVD through intermittent electric discharge, the amorphous semiconductor film containing germanium with a composition ratio of 0.1 atomic percent or more and 10 atomic percent or below to silicon;
• and
• doping the amorphous semiconductor film with an element for promoting crystallization of the amorphous semiconductor film, and then subjecting the film to heat treatment to form a semiconductor film having a polycrystal structure,
• wherein a channel formation region is formed form the semiconductor film having a polycrystal structure, and
• wherein the {101} plane in the semiconductor film having a polycrystal structure reaches 30% or more of all the lattice planes detected by Electron backscatter diffraction.

A method of manufacturing a semiconductor device comprising the steps of:

• forming an amorphous semiconductor film by plasma CVD through intermittent electric discharge, the amorphous semiconductor film containing germanium with a composition ratio of 0.1 atomic percent or more and 10 atomic percent or below to silicon, the amorphous semiconductor film containing less than 5×1018 nitrogen atoms per cm3, less than 5×1018 carbon atoms per cm3, and less than 1×1019 oxygen atoms per cm3;
• and
• doping the amorphous semiconductor film with an element for promoting crystallization of the amorphous semiconductor film, and then subjecting the film to heat treatment to form a semiconductor film having a polycrystal structure,
• wherein a channel formation region is formed form the semiconductor film having a polycrystal structure, and
• wherein the {101} plane in the semiconductor film having a polycrystal structure reaches 30% or more of all the lattice planes detected by Electron backscatter diffraction.

A method of manufacturing a semiconductor device comprising the steps of:

• forming an amorphous semiconductor film by plasma CVD through intermittent electric discharge while setting the repetition frequency to 10 kHz or below and the duty ratio to 50% or less, the amorphous semiconductor film containing germanium with a composition ratio of 0.1 atomic percent or more and 10 atomic percent or below to silicon;
• and
• doping the amorphous semiconductor film with an element for promoting crystallization of the amorphous semiconductor film, and then subjecting the film to heat treatment to form a semiconductor film having a polycrystal structure,
• wherein a channel formation region is formed form the semiconductor film having a polycrystal structure, and
• wherein the {101} plane in the semiconductor film having a polycrystal structure reaches 30% or more of all the lattice planes detected by Electron backscatter diffraction.

A method of manufacturing a semiconductor device comprising the steps of:

• forming an amorphous semiconductor film by plasma CVD through intermittent electric discharge while setting the repetition frequency to 10 kHz or below and the duty ratio to 50% or less, the amorphous semiconductor film containing germanium with a composition ratio of 0.1 atomic percent or more and 10 atomic percent or less to silicon, the amorphous semiconductor film containing less than 5×1018 nitrogen atoms per cm3, less than 5×1018 carbon atoms per cm3, and less than 1×1019 oxygen atoms per cm3;
• and
• doping the amorphous semiconductor film with an element for promoting crystallization of the amorphous semiconductor film, and then subjecting the film to heat treatment to form a semiconductor film having a polycrystal structure,
• wherein a channel formation region is formed form the semiconductor film having a polycrystal structure, and
• wherein the {101} plane in the semiconductor film having a polycrystal structure reaches 30% or more of all the lattice planes detected by Electron backscatter diffraction.