Methods of forming thin film transistors and related systems
OwnerPaul E. Peterson, James Stasiakinventors
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Abstract
Methods of forming thin film transistors and related systems are described. In one embodiment, a method forms source/drain material over a substrate using a low temperature formation process. A channel layer is formed over the substrate using a low temperature formation process. A gate insulating layer is formed over the substrate using a low temperature formation process. A gate is formed over the substrate using a low temperature formation process. The low temperature formation processes that are utilized are conducted at temperatures that are no greater than about 200-degrees C.
Claims51
A thin film transistor (TFT) forming method comprising:
- forming source/drain material over a substrate using a low temperature formation process;
- forming a channel layer over the source/drain material using a low temperature formation process;
- forming a gate insulating layer over the channel layer using a low temperature formation process;
- and
- forming a gate over the gate insulating layer using a low temperature formation process;
- the low temperature formation processes being conducted at temperatures that are no greater than about 200-degrees C.
A thin film transistor (TFT) forming method comprising:
- forming source/drain material over a substrate using at least one low temperature formation process to provide TFT sources and drains;
- forming a channel layer over the substrate using a low temperature formation process, the channel layer comprising a different material than the source/drain material and comprising amorphous silicon;
- exposing portions of the channel layer that are to define channels for individual TFTs to laser conditions sufficient to recrystallize the portions;
- forming a gate insulating layer over the substrate using a low temperature formation process;
- and
- forming a gate over the substrate using a low temperature formation process;
- the low temperature formation processes being conducted at temperatures no greater than about 200-degrees C.
A thin film transistor (TFT) comprising:
- a plastic substrate;
- a pair of low-temperature-formed, source/drain regions supported by the substrate;
- a low-temperature-formed channel layer blanket deposited over the substrate and comprising different material than the source/drain material, the channel layer defining a channel region for the TFT;
- a low-temperature-formed gate insulating layer blanket deposited over the channel layer;
- and
- a low-temperature-formed gate disposed over the channel region.
Dependencies are inferred from the claim text.