Semiconductor quantum dotdevice
AssigneeNEC Corporation
InventorHideaki Saito
Life of this patent
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Abstract
A p-type semiconductor barrier layer is provided in the vicinity of undoped quantum dots, and holes in the p-type semiconductor barrier layer are injected in advance in the ground level of the valence band of the quantum dots. Lowering the threshold electron density of conduction electrons in the ground level of the conduction band of quantum dots in this way accelerates the relaxation process of electrons from an excited level to the ground level in the conduction band.
Claims12
A semiconductor quantum dot device that is provided with a plurality of quantum dots, comprising:
- a p-type impurity arranged inside said quantum dots for generating holes, said holes filling a ground level of a valence band of said quantum dots.
A semiconductor quantum dot device provided with a plurality of quantum dots, comprising:
- a p-type impurity region disposed adjacent to said quantum dots, a p-type impurity being injected into said p-type impurity region for generating holes for filling a ground level of a valence band of said quantum dots.
Dependencies are inferred from the claim text.