Magnetoresistance effect element and method for producing same

A method for producing a magnetoresistance effect element comprising:

• after forming a first electrode, forming a magnetoresistance effect film on said first electrode;
• forming an insulating film on said magnetoresistance effect film;
• and
• using a mask having an opening portion, the position of which matches with the position of said magnetoresistance effect film, to isotropic-etch said insulating film to form a curved recessed portion in said insulating film to expose the top surface of said magnetoresistance effect film to form a second electrode in said recessed portion.

A magnetoresistance effect element comprising:

• a first electrode which has a first protruding portion having a substantially flat top face;
• a current perpendicular to the plane type magnetoresistance effect film, one end of which is electrically connected to said top face of said first electrode;
• and
• a second electrode which has a second protruding portion having a substantially flat top face, said second protruding portion being electrically connected to the other end of said magnetoresistance effect film,
• wherein said first and second protruding portions have shapes converging toward said magnetoresistance effect film in a cross section perpendicular to the film plane of said magnetoresistance effect film.