Methods for forming a thin film on an integrated circuit including soft baking a silicon glass film
OwnerHong-Gun Kim, Eun-Kee Hong +1inventors
InventorsHong-Gun Kim, Eun-Kee Hong, Ju-Seon Goo
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Abstract
Methods of forming a thin film on an integrated circuit substrate including a stepped portion are provided. A spin on glass (SOG) film is formed on the substrate including the stepped portion to fill a recess defined by the stepped portion. The SOG film is soft baked at a temperature of less than 400° C. The soft baked SOG film is etched and an insulation film is formed on the etched SOG film. Methods of forming a trench isolation film including soft baking an SOG film are also provided.
Claims37
A method of forming a thin film on an integrated circuit substrate including a stepped portion, the method comprising:
- forming a spin on glass (SOG) film on the substrate including the stepped portion to fill a recess defined by the stepped portion;
- soft baking the SOG film at a temperature of less than about 400° C.;
- etching the soft baked SOG film;
- and
- forming an insulation film on the etched SOG film.
A method of forming a trench isolation film on an integrated circuit substrate, the method comprising:
- forming a trench on the substrate using a pattern;
- forming a spin on glass (SOG) film on the substrate including the formed trench to fill the trench;
- soft baking the SOG film at a temperature of less than about 400° C.;
- etching the soft baked SOG film;
- forming an insulation film on the etched SOG film;
- removing a portion of the formed insulation film to expose the pattern;
- removing the exposed pattern;
- and
- planarizing a remaining portion of the insulation film.
A method of forming a thin film on an integrated circuit substrate, the method comprising:
- forming a spin on glass (SOG) film on the substrate;
- soft baking the SOG film at a temperature of less than about 400° C.;
- etching the soft baked SOG film;
- and
- forming an insulation film on the etched SOG film.
A method for forming a thin film comprising:
- forming a spin on glass (SOG) film on a substrate including a stepped portion by coating an SOG solution on the stepped portion and on the substrate wherein the SOG film at least partially fills up a recess formed by the stepped portion;
- soft baking the SOG film;
- etching the SOG film;
- and
- forming an insulation film on a resultant structure formed on the substrate.
A method for forming a trench isolation film comprising:
- forming a trench on a substrate by etching the substrate using a pad oxide film pattern and a hard mask pattern as etching masks;
- forming an SOG film on a substrate to sufficiently fill up the trench by coating an SOG solution on the substrate including the trench;
- soft baking the SOG film;
- etching a whole surface of the SOG film;
- forming an insulation film on a resultant structure formed on the substrate;
- partially removing the insulation film to expose the hard mask pattern;
- removing the hard mask pattern and the pad oxide film pattern;
- and
- removing the insulation film remaining on a surface of substrate to expose the surface of the substrate.
Dependencies are inferred from the claim text.