Method and apparatus for fabricating a thin-film solar cell utlizing a hot wire chemical vapor
AssigneeMidwest Research Institute
InventorsQi Wang, Eugene Iwaniczko
Life of this patent
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Abstract
A thin-film solar cell is provided. The thin-film solar cell comprises an a-SiGe:H (1.6eV) n-i-p solar cell having a deposition rate of at least ten (10) Å/second for the a-SiGe:H intrinsic layer by hot wire chemical vapor deposition. A method for fabricating a thin film solar cell is also provided. The method comprises depositing a n-i-p layer at a deposition rate of at least ten (10) Å/second for the a-SiGe:H intrinsic layer.
Claims37
A thin film solar cell, comprising:
- an n-type semiconductor layer;
- a p-type semiconductor layer;
- and
- two or more hydrogenated amorphous silicon-germanium (a-SiGe:H) intrinsic layers positioned between the n-type semiconductor layer and the p-type semiconductor layer.
A method for fabricating a thin film solar cell, the method comprising:
- forming an n-type semiconductor layer;
- forming a p-type semiconductor layer;
- forming two or more hydrogenated amorphous silicon-germanium (a-SiGe:H) intrinsic layers between the n-type semiconductor layer and the p-type semiconductor layer.
A thin film solar cell deposition system, comprising:
- a chamber;
- and
- deposition means within the chamber for forming solar cell having an n-type semiconductor layer, a p-type semiconductor layer, and two or more hydrogenated amorphous silicon-germanium (a-SiGe:H) intrinsic layers between the n-type semiconductor layer and the p-type semiconductor layer.
A thin film solar cell deposition system, comprising:
- means for forming a solar cell having an n-type semiconductor layer, a p-type semiconductor layer, and two or more hydrogenated amorphous silicon-germanium (a-SiGe:H) intrinsic layers between the n-type semiconductor layer and the p-type semiconductor layer at a rate of at least ten (10) Å/second.
Dependencies are inferred from the claim text.