Cleaning solution and method of cleaning a semiconductor substrate using the same

A method of cleaning a semiconductor substrate, comprising:

• providing a substrate having a top surface, a bottom surface and a bevel portion constituting a side edge extending between said top and bottom surfaces, and a layer comprising a nitride that extends over said top surface and onto said bevel portion;
• preparing a cleaning solution comprising from about 10% to about 35% by weight of hydrogen fluoride (HF), from about 10% to about 35% by weight of ammonium fluoride (NH4F) and from about 30% to about 80% by weight of de-ionized water (H2O) based on a total amount of the cleaning solution;
• selectively exposing the bevel portion of the substrate to the cleaning solution to thereby remove the layer from the bevel portion while leaving the layer on the top surface;
• subsequently rinsing the substrate of cleaning solution remaining on the semiconductor substrate;
• and
• subsequently drying the substrate.

A method of cleaning a semiconductor substrate comprising:

• providing a substrate having a top surface, a bottom surface and a bevel portion constituting a side edge extending between said top and bottom surfaces, and a layer comprising a nitride that extends over said top surface and onto said bottom portion;
• preparing a cleaning solution comprising from about 10% to about 35% by weight of hydrogen fluoride (HF), from about 10% to about 35% by weight of ammonium fluoride (NH4F) and from about 30% to about 80% by weight of de-ionized water (H2O) based on a total amount of the cleaning solution;
• removing the layer from the bottom portion of the substrate by dipping the substrate into the cleaning solution;
• subsequently rinsing the substrate of cleaning solution remaining on the semiconductor substrate;
• and
• subsequently drying the substrate.

A method of cleaning a substrate comprising:

• providing a substrate having a top surface, and a nitride layer that extends over said top surface;
• preparing a cleaning solution comprising from about 10% to about 35% by weight of hydrogen fluoride (HF), from about 10% to about 35% by weight of ammonium fluoride (NH4F) and from about 30% to about 80% by weight of de-ionized water (H2O) based on a total amount of the cleaning solution;
• removing the nitride layer from the substrate without damaging the layer underlying the nitride layer, by dipping the substrate into the cleaning solution;
• subsequently rinsing the substrate of cleaning solution remaining on the semiconductor substrate;
• and
• subsequently drying the substrate.

A method for use in the manufacturing of semiconductor devices, comprising:

• providing a control substrate;
• forming a nitride layer a plurality of times on the control substrate;
• determining a characteristic of the nitride layer after each time a said nitride layer is formed on the control substrate;
• regenerating the substrate between respective ones of the plurality of times in which the nitride layers are formed on the substrate by
• preparing a cleaning solution comprising from about 10% to about 35% by weight of hydrogen fluoride (HF), from about 10% to about 35% by weight of ammonium fluoride (NH4F) and from about 30% to about 80% by weight of de-ionized water (H2O) based on a total amount of the cleaning solution, and
• removing the nitride layer from the substrate by dipping the substrate into the cleaning solution.