System and method for heat treating semiconductor

(Amended) A heat-treating apparatus for a semiconductor process, comprising:

• a process chamber which accommodates a target substrate;
• a support member which is disposed in the process chamber and supports the target substrate;
• a heater which heats the target substrate accommodated in the process chamber;
• an exhaust system to evacuate an interior of the process chamber;
• and
• a supply system to supply a process gas into the process chamber,
• wherein the supply system comprises
• a combustor which is disposed outside the process chamber and has a combustion chamber, the combustor serving to generate water vapor by reaction of hydrogen gas and oxygen gas in the combustion chamber and supply the water vapor to the process chamber,
• a heating unit which is disposed outside the process chamber and has a heating chamber, the heating unit serving to selectively heat a gas not passing through the combustion chamber to a temperature not lower than an activating temperature of the gas and supply the gas to the process chamber, and
• a gas distributor which selectively supplies hydrogen gas and oxygen gas to the combustion chamber and selectively supplies a reactive gas and inactive gas to the heating chamber,
• wherein the heating chamber is made of quartz, and a heating member is disposed to surround the heating chamber, the heating member comprising a heating resistor containing a small mount of metal impurities and an insulating sealing body for sealing the heating resistor.