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OwnerNicholas Savvides, Sabaratnasingam Gnanarajan +1inventors
InventorsNicholas Savvides, Sabaratnasingam Gnanarajan, Alex Katsaros
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The invention provides a method of depositing a buffer layer or film onto a surface of a substrate. The method includes providing the substrate in a controlled atmosphere and exposing the substrate to a vapour comprising a film forming species. While the substrate is exposed to the vapour, two or more ion beams are provided incident upon the surface of the substrate to assist formation of the film. The respective axes of incidence of the two or more ion beams are distinct and are selected and controlled in order to maintain the arrival rate ratio, maximise the deposition rate, and maximise the biaxial alignment of the layer so formed.
A method of depositing a film onto a surface of a substrate comprising he steps of:
The method of any preceding claim wherein the first and second ion beams comprise ions of a noble gas.
The method of any preceding claim wherein the step of providing first and second ion beams comprises simultaneously providing the first and second ion beams.
The method of any preceding claim further comprising the step of providing a third ion beam.
The method of any preceding claim and further comprising the step of forming a superconducting article by depositing an epitaxial superconducting material over the film.
The method of any preceding claim and further comprising the step of negatively electrically biasing the substrate during formation of the film.
The method of any preceding claim wherein the substrate comprises a crystalline substrate.
The method of any preceding claim wherein the film comprises a buffer layer.
An apparatus for depositing a film onto a surface of a substrate, the apparatus comprising:
Dependencies are inferred from the claim text.