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US 2004/0168632 A1Published application
Manufacturing system in electronic devices
AssigneeKabushiki Kaisha Toshiba
InventorsShinichi Ito, Tatsuhiko Higashiki, Hiroshi Ikegami, Nobuo Hayasaka
Life of this patent
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Abstract
A laser processing apparatus comprises a laser oscillator for producing a laser beam to selectively remove part of a substrate to be processed, a scanning system for applying the laser beam to an arbitrary position of the substrate and incident means for applying the laser beam to the substrate substantially at right angle.
Claims60
A laser processing apparatus comprising:
- a laser oscillator for producing a laser beam for selectively removing part of a substrate to be processed;
- a scanning system for applying said laser beam to an arbitrary position of said substrate;
- and
- incident means for applying said laser beam to said substrate substantially at right angle.
1 more element
A film deposition system comprising:
- a carrier station for holding one or more substrates to be processed;
- coating film forming means for supplying a coating film forming chemical containing a solvent to a main surface of said substrate to form a coating film on said main surface;
- removing said solvent contained in said coating film to form a film on said main surface;
- laser processing means for applying an energy beam to said main surface from an energy irradiation device to remove selectively at least part of said film from said main surface;
- and
- carrying means, connected to said carrier station, coating film forming means, coating film forming means and laser processing means, for carrying in and out said substrate.
3 more elements
A pattern forming system comprising:
- a carrier station for holding one or more substrate to be processed, said substrate having an alignment mark in a main surface thereof;
- first film forming means for forming a first thin film on said main surface;
- first coating film forming means for forming a coating film on said first thin film by supplying a coating film forming chemical containing both a sensitive material and a solvent to said main surface;
- second coating film forming means for forming a light sensitive thin film by removing said solvent contained in said coating film formed by said first coating film forming means;
- laser processing means for selectively removing at least said light sensitive thin film and part of the first thin film formed on said substrate by irradiating said main surface with an energy beam from an energy irradiation device;
- latent image forming means for detecting a position of an alignment mark on said main surface, thereby forming a latent image in said light sensitive thin film based on positional information of the detected alignment mark;
- light sensitive thin film pattern forming means for forming a light sensitive thin film pattern by applying one of an etching solution and an etching gas to a surface of said light sensitive thin film to remove at least part of said light sensitive thin film selectively;
- and
- carrying means, connected to said carrier station, said coating thin film forming means, said coating thin film forming means and laser processing means, for carrying said substrate.
6 more elements
A method of manufacturing a semiconductor device comprising:
- forming a first thin film on a main surface of a semiconductor substrate having an alignment mark;
- applying a first energy beam to said first thin film provided on a region containing said alignment mark to selectively remove part of said first thin film;
- supplying a chemical containing both a light sensitive material and a solvent onto said first thin film to provide a coating film thereon;
- removing said solvent contained in said coating film to form a light sensitive thin film;
- carrying said semiconductor substrate to latent image forming means and irradiating said positioning mark with a reference beam through a region in which said first thin film is selectively removed, thereby to recognize a position of said alignment mark;
- irradiating a predetermined position on said light sensitive thin film with a second energy beam based on the position of the recognized alignment mark to form a latent image on the light sensitive thin film;
- and
- forming a light sensitive thin film pattern by removing at least part of said light sensitive thin film based on the latent image formed on said light sensitive thin film, wherein
- upon irradiating the first energy beam, liquid is supplied to at least a region irradiated with first energy beam.
6 more elements
A method of manufacturing a semiconductor device comprising:
- forming a first thin film on a main surface of a semiconductor substrate having an alignment mark;
- supplying a chemical containing a light sensitive material and a solvent to said first thin film to form a coating film on said first thin film;
- forming a light sensitive film by removing said solvent contained in said coating film to provide a light sensitive film thereon;
- applying a first energy beam to said light sensitive film provided on a region containing said alignment mark, thereby to selectively remove said light sensitive film and part of said first thin film;
- recognizing a position of said alignment mark by irradiating said alignment mark with said reference light through the region in which said first thin film is selectively removed;
- forming a latent image on said light sensitive film by irradiating a predetermined position of said light sensitive film with a second energy beam based on the position of the recognized alignment mark;
- and
- forming a light sensitive film pattern by selectively removing part of said first thin film based on the latent image formed on said light sensitive film, wherein
- upon irradiating said first energy beam, a liquid is supplied to at least a region irradiated with said first energy beam.
6 more elements
A method of manufacturing a semiconductor device comprising:
- forming a coating film by supplying a chemical containing a light sensitive material and a solvent onto a main surface of a semiconductor substrate having an alignment mark;
- forming a light sensitive thin film on said semiconductor substrate by removing said solvent contained in said coating film;
- removing selectively part of said light sensitive thin film by irradiating said light sensitive thin film on a region containing said alignment mark with a first energy beam;
- carrying said semiconductor substrate to latent image forming means to irradiate said alignment mark with a reference light through the region in which said light sensitive thin film is selectively removed, thereby recognizing a position of said alignment mark;
- forming a latent image on said light sensitive thin film by irradiating a predetermined position of said light sensitive thin film with a second energy beam based on the position of the recognized alignment mark;
- and
- forming a light sensitive thin film pattern by removing selectively said light sensitive thin film based on the latent image formed in said light sensitive thin film, wherein
- upon irradiating said first energy beam, a liquid is supplied to a region irradiated with said first energy beam.
5 more elements
Dependencies are inferred from the claim text.