Polishing pad apparatus and methods
AssigneeRohm and Haas Electronic Materials CMP Holdings, Inc.
InventorAndrew Scott Lawing
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Abstract
Polishing pads having a surface morphology that results in a high degree of planarization efficiency when planarizing a wafer surface are disclosed. One conditioned polishing pad is non-porous and has a surface height distribution with a surface roughness Ra<3 microns. Another conditioned polishing pad is porous and has a surface height probability distribution with a pad surface height Ratio R≧60%, or alternatively has an asymmetric surface height probability distribution characterized by an asymmetry factor A10≦0.50. Methods of pad conditioning and planarizing a wafer using the polishing pads are also disclosed.
Claims14
A polishing pad for chemical mechanical planarization, comprising:
- a non-porous conditioned pad surface characterized by a surface roughness distribution having a surface roughness Ra≦3 microns.
A polishing pad for chemical mechanical planarization, comprising:
- a porous pad conditioned surface having a substantially flat surface characterized by a surface height probability distribution with a pad surface height ratio R≧60%.
A polishing pad for chemical mechanical planarization, comprising:
- a porous pad conditioned surface characterized by an asymmetric surface height probability distribution having an asymmetry factor A10≦0.50.
A method of conditioning a surface of a non-porous polishing pad, comprising:
- contacting a pad conditioner surface to the non-porous polishing pad surface;
- and
- moving the pad conditioner surface relative to the non-porous polishing pad surface while providing a force that presses the surfaces together, thereby forming a surface roughness in the non-porous polishing pad surface characterized by a surface roughness Ra≦3 microns.
A method of conditioning a surface of a porous polishing pad, comprising:
- contacting a pad conditioner surface to porous polishing pad surface;
- moving the pad conditioner surface relative to the non-porous polishing pad surface while providing a force that presses the surfaces together, thereby forming a surface roughness in the non-porous polishing pad surface characterized by an asymmetric surface height probability distribution having a pad surface height ratio R≧60%.
A method of conditioning a surface of a porous polishing pad, comprising:
- contacting a pad conditioner surface to the non-porous polishing pad surface;
- and
- moving the pad conditioner surface relative to the non-porous polishing pad surface while providing a force that presses the surfaces together, thereby forming a surface roughness in the non-porous polishing pad characterized by an asymmetric surface height probability distribution having an asymmetry factor A10≦0.50.
A method of planarizing a surface of a wafer, comprising:
- providing and maintaining a non-porous polishing pad having a surface with a surface roughness Ra≦3 microns;
- movably contacting the polishing pad surface with the wafer surface;
- pressing the wafer surface against the polishing pad surface;
- and
- moving the polishing pad surface relative to the wafer surface in the presence of a slurry.
A method of planarizing a surface of a wafer, comprising:
- providing and maintaining a porous polishing pad having a surface roughness characterized by a surface height probability distribution having a pad surface height ratio R≧60%;
- movably contacting the polishing pad surface with the wafer surface;
- pressing the wafer surface against the polishing pad surface;
- and
- moving the polishing pad surface relative to the wafer surface in the presence of a slurry.
A method of planarizing a surface of a wafer, comprising:
- providing and maintaining a porous polishing pad having a surface roughness characterized by an asymmetric surface height probability distribution having an asymmetry factor A10≦0.50;
- movably contacting the polishing pad surface with the wafer surface;
- pressing the wafer surface against the polishing pad surface;
- and
- moving the polishing pad surface relative to the wafer surface in the presence of a slurry.
Dependencies are inferred from the claim text.