Limited thermal budget formation of PMD layers

A method of filling a gap defined by adjacent raised features on a substrate, comprising:

• providing a flow of a silicon-containing processing gas to a chamber housing the substrate;
• providing a flow of an oxidizing processing gas to the chamber;
• depositing a first portion of a silicon oxide film as a substantially conformal layer in the gap by causing a reaction between the silicon-containing processing gas and the oxidizing processing gas, wherein depositing the conformal layer comprises varying over time a ratio of the (silicon-containing processing gas):(oxidizing processing gas) and maintaining the temperature of the substrate below about 500° C. throughout deposition of the conformal layer;
• thereafter, depositing a second portion of the silicon oxide film as a bulk layer, wherein depositing a second portion of the film comprises maintaining the ratio of the (silicon-containing processing gas):(oxidizing processing gas) substantially constant throughout deposition of the bulk layer and maintaining the temperature of the substrate below about 500° C. throughout deposition of the bulk layer;
• and
• thereafter, depositing a cap layer comprising a P-doped silicon oxide film while maintaining the substrate below about 500° C. throughout deposition of the cap layer.

A method of processing a semiconductor substrate, comprising:

• providing a flow of a silicon-containing process gas to a chamber housing the substrate;
• providing a flow of an oxidizer process gas to the chamber;
• causing a reaction between the silicon-containing process gas and the oxidizing process gas to form a silicon oxide layer on the substrate;
• varying over time a ratio of the (silicon-containing gas):(oxidizing gas) flowed into the chamber to alter a rate of deposition of the silicon oxide on the substrate;
• and
• maintaining the substrate at or below a reflow temperature of the silicon oxide layer throughout processing of the semiconductor substrate.

A method of processing a semiconductor substrate, comprising:

• providing a flow of a silicon-containing process gas to a chamber housing the substrate;
• providing a flow of an oxidizing process gas to the chamber;
• providing a flow of a phosphorous-containing process gas to the chamber;
• causing a reaction between the silicon-containing process gas, the oxidizing process gas, and the phosphorous-containing gas to form a P-doped silicon oxide layer on the substrate;
• and
• varying over time a ratio of the (silicon-containing gas):(oxidizing gas):(phosphorous-containing gas) flowed into the chamber to alter a rate of deposition of the silicon oxide on the substrate.