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OwnerJianxing Li, Stephen Turner +1inventors
InventorsJianxing Li, Stephen Turner, Lijun Yao
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The invention described herein relates to new titanium-comprising materials which can be utilized for forming titanium alloy sputtering targets. The titanium alloy sputtering targets can be reactively sputtered in a nitrogen-comprising sputtering atmosphere to form an alloy TiN film, or alternatively in a nitrogen-comprising and oxygen-comprising sputtering atmosphere to form an alloy TiON thin film. The thin films formed in accordance with the present invention can have a non-columnar grain structure, low electrical resistivity, high chemical stability, and barrier layer properties comparable to those of TaN for thin film Cu barrier applications. Further, the titanium alloy sputtering target materials produced in accordance with the present invention are more cost-effective for semiconductor applications than are high-purity tantalum materials and have superior mechanical strength suitable for high-power sputtering applications.
A sputtering target used for forming a barrier layer relative to a copper-containing material and comprising Ti and one or more alloying elements which have a standard electrode potential of less than about −1.0V.
A sputtering target used for forming a barrier layer relative to a Cu-containing material and comprising Ti and one or more alloying elements having at least a 8 percent difference in atomic radii relative to titanium.
A sputtering target used for forming a barrier layer relative to a Cu-containing material and comprising Ti and one or more alloying elements having at least a 20 percent difference in atomic radii relative to titanium.
A sputtering target used for forming a barrier layer relative to a Cu-containing material and comprising Ti and one or more alloying elements which have a melting temperature of at least about 2400° C.
A sputtering target consisting essentially of Ti and Zr;
A sputtering target comprising Ti and one or more alloying elements which have a standard electrode potential of less than about −1.0V;
A sputtering target comprising Ti and one or more alloying elements having at least a 8 percent difference in atomic radii relative to titanium;
A sputtering target comprising Ti and one or more alloying elements which have a melting temperature of at least about 2400° C.;
A sputtering target used for forming a barrier layer relative to a silver-containing material and comprising Ti and one or more alloying elements having at least one of:
A sputtering target used for forming a barrier layer relative to an aluminum-containing material and comprising Ti and one or more alloying elements having at least one of:
A means for forming a Cu barrier layer by sputter-depositing a film from a target comprising Ti and one or more alloying elements selected from the group consisting of Be, B, Al, Si, Ca, Sc, V, Cr, Mn, Fe, Sr, Y, Zr, Cs, Ba, La, Hf, Ta, Ce, Pr, Nd, Sm, Gd, Dy, Ho and Er.
A method of inhibiting copper diffusion into a substrate, comprising:
A method of inhibiting copper diffusion into a substrate, comprising:
A thin film of TixQyNz inhibiting copper diffusion from a copper-containing material and formed by sputtering a sputtering target in a nitrogen atmosphere, wherein “Q” is a label for said one or more alloying elements;
A thin film of TixQyNzOw inhibiting copper diffusion from a copper-containing material and formed by sputtering a sputtering target in the presence of a nitrogen-containing gas and an oxygen-containing gas, wherein “Q” is a label for said one or more alloying elements;
A thin film of TixQyNz inhibiting copper diffusion from a copper-containing material and formed by sputtering a sputtering target in a nitrogen atmosphere, wherein “Q” is a label for said one or more alloying elements;
A thin film of TixQyNzOw inhibiting copper diffusion from a copper-containing material and formed by sputtering a sputtering target in the presence of a nitrogen-containing gas and an oxygen-containing gas, wherein “Q” is a label for said one or more alloying elements;
A thin film of TixQyNz inhibiting copper diffusion from a copper-containing material and formed by sputtering a sputtering target in a nitrogen atmosphere, wherein “Q” is a label for said one or more alloying elements;
A thin film of TixQyNzOw inhibiting copper diffusion from a copper-containing material and formed by sputtering a sputtering target in the presence of a nitrogen-containing gas and an oxygen-containing gas, wherein “Q” is a label for said one or more alloying elements;
A semiconductor construction, comprising:
Dependencies are inferred from the claim text.