Method of manufacturing semiconductor device
AssigneesKabushiki Kaisha Toshiba, Sony Corporation
InventorsHideshi Miyajima, Kazuyuki Higashi, Keiji Fujita, Toshiaki Hasegawa, Kiyotaka Tabuchi
Life of this patent
Estimating the term…
Abstract
A semiconductor device manufacturing method comprises forming a first insulating film including silicon, carbon, nitrogen, and hydrogen above a substrate in a first chamber, carrying the substrate into a second chamber other than the first chamber, and discharging a rare gas in the second chamber, and forming a second insulating film including silicon, carbon, oxygen, and hydrogen above the first insulating film after the discharging the rare gas.
Claims20
A semiconductor device manufacturing method comprising:
- forming a first insulating film including silicon, carbon, nitrogen, and hydrogen above a substrate in a first chamber;
- carrying the substrate into a second chamber other than the first chamber, and discharging a rare gas in the second chamber;
- and
- forming a second insulating film including silicon, carbon, oxygen, and hydrogen above the first insulating film after the discharging the rare gas.
A semiconductor device manufacturing method comprising:
- forming a first insulating film including silicon, carbon, nitrogen, and hydrogen above a substrate;
- irradiating an energy ray on the first insulating film;
- and
- forming a second insulating film including silicon, carbon, oxygen, and hydrogen by a plasma CVD method above the first insulating film after the irradiating the energy ray.
A semiconductor device manufacturing method comprising:
- forming a first insulating film including silicon, carbon, nitrogen, and hydrogen above a substrate;
- exposing the substrate in a humidified atmosphere including H2O;
- heating the substrate after the exposing the substrate;
- and
- forming a second insulating film including silicon, carbon, oxygen, and hydrogen by a plasma CVD method above the first insulating film after the heating the substrate.
Dependencies are inferred from the claim text.