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US 2004/0166678 A1Published application
Wet clean method for PZT capacitors
OwnerLindsey H. Hallinventor
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Abstract
A PZT ferroelectric layer (55) is used to form an integrated capacitor. The PZT ferroelectric layer (55) is sandwiched between various conductive layers (35), (45), (65), (75), (85), and (95). During the etching processes used to form the capacitor, damaged regions (100) are formed on the PZT layer (55). A wet clean process that comprises exposing the PZT layer to phosphoric acid is used to remove the damaged regions (100).
Claims8
A method to form integrated circuit capacitors, comprising:
- providing a dielectric layer;
- forming at least one conductive layer on said dielectric layer;
- forming a PZT layer on said at least one conductive layer;
- forming at least one conductive layer on said PZT layer;
- etching said PZT layer;
- and
- exposing said PZT layer to phosphoric acid.
4 more elements
A wet clean method for forming PZT capacitors, comprising:
- providing a dielectric layer;
- forming at least one conductive layer on said dielectric layer;
- forming an iridium layer on said at least one first conductive layer;
- forming a PZT layer on said iridium layer;
- forming an iridium layer on said PZT layer;
- forming a plurality of conductive layers on said iridium layer;
- etching said plurality of conductive layers,
- etching said iridium layer, said PZT layer, said iridium layer and said at least one conductive layer;
- and
- exposing said PZT layer to a wet cleaning process comprising phosphoric acid.
7 more elements
Dependencies are inferred from the claim text.