Methods for forming ruthenium films with beta-diketone containing ruthenium complexes and method for manufacturing metal-insulator-metal capacitor using the same

A method for manufacturing a metal-insulator-metal (MIM) capacitor, comprising:

• (a) forming a first ruthenium film for a lower electrode on a semiconductor substrate;
• (b) forming a dielectric layer on the lower electrode;
• and
• (c) forming a second ruthenium film for an upper electrode on the dielectric layer, step (a) comprising supplying a two β-diketones-coordinated ruthenium complex as a ruthenium source at a flow rate of 0.2-1 ccm and oxygen at a flow rate of 20-60 sccm onto the substrate and depositing the first ruthenium film using CVD, and step (c) comprising supplying a two β-diketones-coordinated ruthenium complex as a ruthenium source at a flow rate of 0.2-1 ccm and oxygen at a flow rate of 20-60 sccm onto the substrate and depositing the second ruthenium film using CVD.