A method of producing a thin layer of semiconductor material
AssigneeCommissariat a l'Energie Atomique
InventorsBERNARD ASPAR, MICHEL BRUEL, THIERRY POUMEYROL
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Abstract
Abstract of the Disclosure The invention relates to a method of producing a thin layer of semiconductor material including:-a step of implanting ions through a flat face (2) of a semiconductor wafer in order to creat a layer of microcavities, the ion dose being within a specific range in order to avoid the formation of blisters on the flat face,-a thermal treatment step in order to achieve coalescence of the microcavities-possibly, a step of creating at least one electronic component (5) in the thin layer (6), -a separation step of separating the thin layer (6) from the rest (7) of the wafer.
Claims8
13. A method for producing a thin film comprising:
- providing a first substrate having a face surface;
- introducing ions into the first substrate at the face surface, such that microcavities are formed in the first substrate during or after introducing the ions, wherein the microcavities define a thin film layer extending from the first surface to the microcavities, and wherein the microcavities reside between solid bridges of the first substrate;
- bonding a second substrate to the face surface of the first substrate;
- and
- applying mechanical forces to fracture the solid bridges.
14. The method for producing a thin film according to claim 13, further comprising applying energy to the first substrate.
15. The method for producing a thin film according to claim 14, wherein applying energy comprises applying thermal energy.
16. The method for producing a thin film according claim 14, wherein applying energy comprises applying energy after introducing ions.
17. A method for producing a thin film comprising:
- providing a first substrate having a face surface;
- introducing ions into the first substrate at the face surface and forming microcavities in the first substrate, wherein the microcavities define a thin film layer extending from the first surface to the microcavities, and wherein the microcavities reside between solid bridges of the first substrate;
- bonding a second substrate to the face surface of the first substrate;
- and
- applying mechanical forces to fracture the solid bridges.
18. The method for producing a thin film according to claim 17, further comprising applying energy to the first substrate.
19. The method for producing a thin film according to claim 17, wherein applying energy comprises applying thermal energy.
20. The method for producing a thin film according to claim 17, wherein applying energy comprises applying energy after introducing ions.
Dependencies are inferred from the claim text.