Methods for use in forming a capacitor and structures resulting from same
AssigneeMicron Technology, Inc.
InventorsGurtej S. Sandhu, Garo Derderian
Life of this patent
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Abstract
A method for use with the formation of a capacitor includes providing a capacitor structure by forming a first electrode on a portion of a substrate assembly, forming a high dielectric material over at least a portion of the first electrode, and forming a second electrode over the high dielectric material. An additional layer may be formed over at least a portion of the second electrode. The portion of the substrate assembly on which the first electrode is formed and/or the layer formed over the second electrode are formed of an excess oxygen containing material.
Claims60
A method for use with the formation of a capacitor, the method comprising:
- providing a capacitor structure including:
- forming a first electrode on a portion of a substrate assembly, forming a high dielectric material over at least a portion of the first electrode, and
- forming a second electrode over the high dielectric material;
- and
- forming a layer over at least a portion of the second electrode, wherein at least one of the portion of the substrate assembly and the layer formed over the second electrode is formed of an excess oxygen containing material.
A method for use with the formation of a capacitor, the method comprising:
- providing a first electrode;
- providing a high dielectric material over at least a portion of the first electrode;
- providing a second electrode over the high dielectric material;
- and
- forming an ozone enhanced oxide layer over at least a portion of the second electrode.
A method for use with the formation of a capacitor, the method comprising:
- providing a substrate assembly having a region formed of an ozone enhanced oxide material;
- forming a first electrode over at least a portion of the region of ozone enhanced oxide material;
- forming a high dielectric material over at least a portion of the first electrode;
- and
- forming a second electrode over the high dielectric material.
A method for use in forming a memory cell having a capacitor, the method comprising the steps of:
- providing a capacitor having a first electrode, a second electrode, and a high dielectric material between the first and second electrode, wherein the capacitor is sandwiched between two regions, at least a portion of at least one of the two regions is formed of an ozone enhanced oxide material;
- and
- forming one or more post capacitor formation layers during one or more thermal cycles relative to the capacitor, wherein an oxygen concentration of the high dielectric material is substantially maintained during formation of the one or more post capacitor formation layers.
A capacitor structure, comprising:
- a first electrode formed on at least a portion of a substrate assembly;
- a dielectric material on at least a portion of the first electrode;
- a second electrode on the dielectric material;
- and
- a layer formed over at least a portion of the second electrode, wherein at least one of the portion of the substrate assembly and the layer formed over the second electrode is formed of an excess oxygen containing material.
A method for use in forming an integrated circuit structure, the method comprising:
- forming a capacitor structure, wherein the capacitor structure comprises a first conductive material, a second conductive material, and a dielectric material between at least portions of the first and second conductive material, wherein the dielectric material comprises an initial oxygen concentration upon formation thereof;
- forming an excess oxygen containing material on at least a portion of the second conductive material, wherein forming the excess oxygen containing material comprises reacting TEOS with ozone;
- and
- subjecting the capacitor structure and the excess oxygen containing material to thermal cycling during one or more fabrication processes, wherein the excess oxygen containing material provides oxygen atoms during the thermal cycling to the dielectric material such that oxygen reduction in the dielectric material due to the thermal cycling is reduced.
A method for use in forming an integrated circuit structure, the method comprising:
- forming a capacitor structure, wherein the capacitor structure comprises a first conductive material, a second conductive material, and a dielectric material between at least portions of the first and second conductive material, wherein the dielectric material comprises an initial oxygen concentration upon formation thereof;
- forming an ozone enhanced oxide material on at least a portion of the second conductive material;
- and
- subjecting the capacitor structure and the ozone enhanced oxide material to thermal cycling during one or more fabrication processes, wherein the ozone enhanced oxide material provides oxygen atoms during the thermal cycling to the dielectric material such that the initial oxygen concentration of the dielectric material is substantially maintained during the thermal cycling.
Dependencies are inferred from the claim text.