Transistor fabrication methods
AssigneeMicron Technology, Inc.
InventorDon Carl Powell
Life of this patent
Estimating the term…
Abstract
A transistor gate is formed which comprises semiconductive material and conductive metal. Source/drain regions are formed proximate the transistor gate. In one implementation, the transistor gate and source/drain regions are exposed to a gas mixture comprising H2O, H2, a noble gas and N2 under conditions effective to oxidize outer surfaces of the source/drain regions. The N2 is present in the gas mixture at greater than 0 % and less than or equal to 20.0 % by volume. In one implementation, the transistor gate and source/drain regions are exposed to a gas mixture comprising H2O, H2, and an inert gas under conditions effective to oxidize outer surfaces of the source/drain regions. The conditions comprise a pressure of greater than room ambient pressure. Other aspects and implementations are contemplated.
Claims75
A transistor fabrication method, comprising:
- forming a transistor gate comprising semiconductive material and conductive metal;
- forming source/drain regions proximate the transistor gate;
- and
- exposing the transistor gate and source/drain regions to a gas mixture comprising H2O, H2, a noble gas and N2 under conditions effective to oxidize outer surfaces of the source/drain regions, the N2 being present in the gas mixture at greater than 0% and less than or equal to 20.0% by volume.
A transistor fabrication method, comprising:
- forming a transistor gate comprising semiconductive material and conductive metal;
- forming source/drain regions proximate the transistor gate;
- and
- exposing the transistor gate and source/drain regions to a gas mixture comprising H2O, H2, and an inert gas under conditions effective to oxidize outer surfaces of the source/drain regions, the conditions comprising a pressure of greater than room ambient pressure.
A transistor fabrication method, comprising:
- forming a transistor gate comprising semiconductive material and conductive metal;
- forming source/drain regions proximate the transistor gate;
- and
- exposing the transistor gate and source/drain regions to a gas mixture comprising H2O, H2, and an inert gas under conditions effective to oxidize outer surfaces of the source/drain regions at an oxide forming reaction rate of at least 0.20 Angstroms/minute where a volumetric ratio of all inert gas to H2 is at least 10:1.
Dependencies are inferred from the claim text.