Methods and apparatus for forming dielectric structures in integrated circuits

A method of forming an integrated circuit capacitor, the method comprising:

• forming a first electrode on a substrate;
• forming a first dielectric layer on the first electrode using a first one of an ALD process and a CVD process;
• forming a second dielectric layer on the first dielectric layer using a second one of the ALD process and the CVD process;
• and
• forming a second electrode on the second dielectric layer.

An apparatus for forming multi-layer dielectric structures on a semiconductor substrate, the apparatus comprising:

• a first chamber configured to form dielectric layers according to a chemical vapor deposition (CVD) process;
• a second chamber configured to form dielectric layers according to an atomic layer deposition (ALD) process;
• and
• means for providing a substrate to one of the first and second chambers for formation of a first dielectric layer on the substrate and for automatically transferring the substrate to a second one of the first and second chambers for formation of a second dielectric layer directly on the first dielectric layer.