Integrated metal-insulator-metal capacitor and metal gate transistor
AssigneeInternational Business Machines Corporation
InventorsLawrence A. Clevenger, Louis L. Hsu, Kwong Hon Wong
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Abstract
An integrated circuit structure is disclosed that comprises a pair of capacitors, each having metal plates separated by an insulator, and metal gate semiconductor transistors electrically connected to the capacitors. The metal gate of the transistors and one of the metal plates of each of the capacitors comprise the same metal level in the integrated circuit structure. More specifically, each of the capacitors comprise a vertical capacitor having an upper metal plate vertically over a lower metal plate and each metal gate of the transistors and each upper metal plate of the capacitors comprise the same metal level in the integrated circuit structure.
Claims23
An integrated circuit structure comprising:
- a capacitor having metal plates separated by an insulator;
- and
- a semiconductor transistor electrically connected to said capacitor and having a metal gate.
An integrated circuit structure comprising:
- a pair of capacitors, each having metal plates separated by an insulator;
- and
- semiconductor transistors, each being electrically connected to one of said capacitors, wherein each of said semiconductor transistors has a metal gate.
A method of forming a metal-insulator-metal capacitor and an associated semiconductor transistor having a metal gate, said method comprising:
- forming a first metal layer;
- forming an insulator over said first metal layer;
- removing a portion of said first metal layer from a gate region;
- and
- forming a second metal layer over said insulator and in said gate region,
- wherein said second metal layer comprises a gate of said transistor and a plate of said transistor.
A method of forming a metal-insulator-metal capacitor and an associated semiconductor transistor having a metal gate, said method comprising:
- patterning sacrificial gate structures over a substrate;
- forming sidewall spacers adjacent said sacrificial gate structures;
- forming a first metal layer adjacent said sidewall spacers;
- planarizing said first metal layer;
- removing said sacrificial gate structures;
- forming an insulator over said first metal layer;
- removing a portion of said first metal layer from a gate region;
- and
- forming a second metal layer over said insulator and in said gate region,
- wherein said second metal layer comprises a gate of said transistor and a plate of said transistor.
Dependencies are inferred from the claim text.