Semiconductor light emitting device and method for producing the same
AssigneeSharp Kabushiki Kaisha
InventorMasaya Ishida
Life of this patent
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Abstract
A semiconductor light emitting device comprises: a substrate; an n-type layer provided on the substrate and made of a nitride semiconductor material; a multiple quantum well structure active layer including a plurality of well layers each made of InxGa(1-x-y)AlyN (0≦x, 0≦y, x+y<1) and a plurality of barrier layers each made of InaGa(1-a-t)AltN (0≦s, 0≦t, s+t<1), the multiple quantum well structure active layer being provided on the n-type layer; and a p-type layer provided on the multiple quantum well structure active layer and made of a nitride semiconductor material. The p-type layer contains hydrogen, and the hydrogen concentration of the p-type layer is greater than or equal to about 1×1016 atoms/cm3 and less than or equal to about 1×1019 atoms/cm3.
Claims10
A semiconductor light emitting device comprising:
- a substrate:
- an n-type layer provided on the substrate and made of a nitride semiconductor material;
- a multiple quantum well structure active layer including a plurality of well layers each made of InxGa(1-x-y)AlyN (0≦x, 0≦y, x+y<1) and a plurality of barrier layers each made of InaGa(1-a-t)AltN (0≦s, 0≦t, s+t<1), the multiple quantum well structure active layer being provided on the n-type layer;
- and
- a p-type layer provided on the multiple quantum well structure active layer and made of a nitride semiconductor material,
- wherein the p-type layer contains hydrogen, and the hydrogen concentration of the p-type layer is greater than or equal to about 1×1016 atoms/cm3 and less than or equal to about 1×1019 atoms/cm3.
A method for producing a semiconductor light emitting device, the method comprising the steps of:
- growing a nitride semiconductor material on a substrate to form an n-type layer;
- forming a multiple quantum well structure active layer Including a plurality of well layers each made of InxGa(1-x-y)AlyN (0≦x, 0≦y, x+y<1) and a plurality of barrier layers each made of InaGa(1-a-t)AltN (0≦s, 0≦t, s+t<1), the multiple quantum well structure active layer being provided on the n-type layer;
- and
- growing a nitride semiconductor material on the multiple quantum well structure active layer to form a p-type layer,
- wherein the step of growing the p-type layer includes the step of growing a nitride semiconductor material in an atmosphere not containing hydrogen gas while keeping a temperature of the substrate at a first growth temperature.
Dependencies are inferred from the claim text.