Manufacturing method of semiconductor device
AssigneeFujitsu Limited
InventorsNaoya Sashida, Katsuyoshi Matsuura, Yoshimasa Horii, Masaki Kurasawa, Kazuaki Takai
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Abstract
There are provided a step of forming an insulating film over a semiconductor substrate, a step of exciting a plasma of a gas having a molecular structure in which hydrogen and nitrogen are bonded and then irradiating the plasma onto the insulating film, a step of forming a self-orientation layer made of substance having a self-orientation characteristic on the insulating film, and a step of forming a first conductive film made of conductive substance having the self-orientation characteristic on the self-orientation layer.
Claims21
A manufacturing method of a semiconductor device comprising the steps of:
- forming an insulating film over a semiconductor substrate;
- exciting a plasma of a gas having a molecular structure in which hydrogen and nitrogen are bonded and irradiating the plasma onto the insulating film;
- forming a self-orientation layer made of substance having a self-orientation characteristic on the insulating film;
- and
- forming a first conductive film made of conductive substance having the self-orientation characteristic on the self-orientation layer.
Dependencies are inferred from the claim text.