Method and apparatus for forming damascene structure, and damascene structure

A method for forming a conductive damascene structure by filling copper in a plug portion formed on an insulating film, the method comprising:

• prior to filling copper in the plug portion, forming the plug portion by a film forming process and an etching process that provide either little or no copper barrier property to side wall portions and plane portions defining inner walls of the plug portion, and then forming at once a copper barrier layer on the side wall portions and the plane portions of the created plug portion by a plasma process utilizing a gas plasma including a component that functions as a barrier against copper.

A method for forming a conductive damascene structure by filling copper in a plug portion formed on an insulating film, the method comprising:

• prior to filling copper in the plug portion formed to have on its inner wall a two-step trench portion comprising a large cross-section and a small cross-section via a plane portion, forming the plug portion by a film forming process and an etching process that provide either little or no copper barrier property to side wall portions and the plane portions defining the inner walls of the plug portion, and then forming at once a copper barrier layer on the side wall portions and the plane portions of the created plug portion having little or no copper barrier property by a plasma process utilizing a gas plasma including a component that functions as a barrier against copper.

A method for forming a conductive damascene structure by filling copper in a plug portion formed on an insulating film, the method comprising:

• prior to filling copper in the plug portion, forming the plug portion by a film forming process and an etching process that provide either little or no copper barrier property to side wall portions and plane portions defining inner walls of the plug portion, and then forming at once a copper barrier layer on the side wall portions and the plane portions of the created plug portion by a plasma process utilizing a gas plasma generated from a mixture including at least a rare gas and one of the following gases;
• carbon atom-containing gas, nitrogen atom-containing gas, hydrogen atom-containing gas, bromine atom-containing gas, or boron atom-containing gas.

A method for forming a conductive damascene structure by filling copper in a plug portion formed on an insulating film, the method comprising:

• prior to filling copper in the plug portion formed to have on its inner walls a two-step trench portion comprising a large cross-section and a small cross-section via a plane portion, forming the plug portion by a film forming process and an etching process that provide either little or no copper barrier property to side wall portions and plane portions constituting the inner walls of the plug portion, and then forming at once a copper barrier layer on the side wall portions and the plane portions of the created plug portion by a plasma process utilizing a gas plasma generated from a mixture of rare gas and hydrocarbon gases.

A method for forming a conductive damascene structure by filling copper in a plug portion formed on an insulating film, the method comprising:

• prior to filling copper in the plug portion, forming the plug portion by a film forming process and an etching process that provide either little or no copper barrier property to side wall portions and plane portions defining inner walls of the plug portion, and then forming at once a copper barrier layer on the created plug portion by turning gas including at least carbon atom-containing gas, nitrogen atom-containing gas, hydrogen atom-containing gas, bromine atom-containing gas, or boron atom-containing gas into plasma so as to generate ions including said component;
• accelerating the generated ions by 1 keV to 50 keV;
• and making the accelerated ions collide against both the side wall portions and the plane portions of the formed plug portion to create the copper barrier layer.