Additive for photoresist composition for resist flow process
AssigneeHynix Semiconductor Inc.
InventorsMin Ho Jung, Sung Eun Hong, Jae Chang Jung, Geun Su Lee, Ki Ho Baik
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Abstract
The present invention provides an additive for a photoresist composition for a resist flow process. A compound of following Formula 1 having low glass transition temperature is added to a photoresist composition containing a polymer which is not suitable for the resist flow process due to its high glass transition temperature, thus improving a flow property of the photoresist composition. As a result, the photoresist composition comprising an additive of Formula 1 can be used for the resist flow process. 1 wherein, A, B, R and R′ are as defined in the specification of the invention.
Claims20
An additive of following Formula 1 for a photoresist composition for a resist flow process.
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- wherein, A is H or —OR″,
- B is H or —OR′″, and
- R, R′, R″ and R′″ are independently selected from the group consisting of C1-C10 alkyl, C1-C10 alkoxyalkyl, C1-C10 alkylcarbonyl, and C1-C10 alkyl containing at least one hydroxyl group (—OH).
A photoresist composition comprising:
- a photoresist polymer, a photoacid generator, an additive of following Formula 1, and an organic solvent,
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- wherein, A is H or —OR″,
- B is H or —OR′″, and
- R, R′, R″ and R′″ are independently selected from the group consisting of C1-C10 alkyl, C1-C10 alkoxyalkyl, C1-C10 alkylcarbonyl, and C1-C10 alkyl containing at least one hydroxyl group (—OH).
A process for forming a photoresist pattern comprising the steps of:
- (a) forming a first photoresist pattern on a substrate using a photoresist composition comprising a photoresist polymer, a photo acid generator, an organic solvent, and an additive of following Formula 1:
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- wherein, A is H or —OR″,
- B is H or —OR′″, and
- R, R′, R″ and R′″ are independently selected from the group consisting of C1-C10 alkyl, C1-C10 alkoxyalkyl, C1-C10 alkylcarbonyl, and C1-C10 alkyl containing at least one hydroxyl group (—OH), and
- (b) producing a second photoresist pattern from said first photoresist pattern using a resist flow process.
Dependencies are inferred from the claim text.