Method for fabricating crystalline-dielectric thin films and devices formed using same
AssigneeInternational Business Machines Corporation
InventorsCharles Black, Christopher Bruce Murray
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Abstract
This invention describes a new method for forming and depositing thin films of crystalline dielectric materials. The present technique uses chemical synthesis to control the granularity and thickness of the dielectric films. This method has several key advantages over existing technologies, and facilitates the integration of crystalline dielectric materials into high-density memory devices.
Claims52
A method for fabricating a thin film on a substrate, which comprises:
- depositing a plurality of nanoparticles initially in a solvent onto said substrate in such a way that said nanoparticles form a monolayer on said substrate;
- wherein said nanoparticles are coated with an organic surfactant, and wherein said nanoparticles are electrically insulating with relative dielectric constant greater than 10.
A thin film fabricated on a substrate by the method which comprises:
- depositing a plurality of nanoparticles initially on a solvent onto said substrate in such a way that said nanoparticles form a monolayer on said substrate;
- wherein said nanoparticles are coated with an organic surfactant, and wherein said nanoparticles are electrically insulating with relative dielectric constant greater than 10.
A dielectric thin film with relative dielectric constant greater than 10 comprising a crystalline structure having a relatively narrow grain-sized distribution, wherein said narrow grain-sized distribution has a standard deviation selected from the group consisting of:
- less than 15%, less than 10% and less than 5%.
A capacitor comprising an electrically insulating layer that is sandwiched between first and second electrically conducting electrodes, wherein said electrically insulating layer is formed by the method which comprises:
- depositing a plurality of nanoparticles on said substrate in such a way that said nanoparticles form a monolayer on said substrate;
- wherein said nanoparticles are coated with an organic surfactant, and wherein said nanoparticles are electrically insulating with relative dielectric constant greater than 10, and optionally heating said monolayer of nanoparticles to thereby form said thin film.
A field effect transistor comprising:
- a source region and a drain region;
- a channel region comprising a semiconductor material;
- an insulating layer of electrically insulating material disposed over said channel region, and a gate electrode overlying said layer of electrically insulating material, wherein said layer of electrically insulating material is formed by the method which comprises:
- depositing a plurality of nanoparticles on said substrate in such a way that said nanoparticles form a monolayer on said substrate;
- wherein said nanoparticles are coated with an organic surfactant, and wherein said nanoparticles are electrically insulating with relative dielectric constant greater than 10;
- and optionally heating said monolayer of nanoparticles to thereby form said thin film.
Dependencies are inferred from the claim text.