Method for preparing low dielectric films
AssigneePostech Foundation
InventorsShi-Woo Rhee, Sang-Ki Kwak
Life of this patent
Estimating the term…
Abstract
A low dielectric constant hydrogenated silicon-oxycarbide (SiCO:H) film is prepared by conducting chemical vapor deposition using, together with an O2-containing gas plasma, an organosilicon or organosilicate compound having at least one vinyl or ethinyl group, or a mixture of a saturated organosilicon or organosilicate compound and an unsaturated hydrocarbon.
Claims11
A method for preparing a low dielectric constant hydrogenated silicon-oxycarbide (SiCO:H) film which comprises conducting chemical vapor deposition using, together with an O2-containing gas plasma, an organosilicon or organosilicate compound having at least one vinyl or ethinyl group, or a mixture of a saturated organosilicon or organosilicate compound and an aliphatically unsaturated hydrocarbon.
Dependencies are inferred from the claim text.