Oh and h resistant silicon material
AssigneeCZT Inc.
InventorSusana Curatolo
Life of this patent
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Abstract
A method of forming a single crystalline structure having a substantially linear response at least over the wave lengths of 1,200 to 1,700 nanometers, the resulting structure and its use as an optical media or a barrier coating. Thus, maximum obtainable optical transmission with zero attenuation is provided. There is no intrinsic material absorption.
Claims37
A method of forming a single crystalline structure of two substances comprising:
- inserting the two substances into a substantially spherical crucible;
- sealing the crucible in a substantially spherical envelope;
- heating the two substances in an oven at a temperature and time sufficient to create a single crystalline material of the two substances.
A method of forming a single crystalline structure having a substantially linear response at least over the wave lengths of 1,200 to 1,700 nanometers comprising:
- inserting two substances into a crucible;
- sealing the crucible in an envelope;
- heating the two substances in an oven at a temperature and time sufficient to create a single crystalline material of the two substances having a substantially linear response at least over the wave lengths of 1,200 to 1,700 nanometers.
An optical media comprising:
- single crystalline structures of a silicon compound having a substantially linear response at least over the wave lengths of 1,200 to 1,700 nanometers.
An optical media comprising:
- a single crystalline structure of silica and tellurium having the structure of FIG. 8.
An optical media comprising:
- a single crystalline structure of SiO2Te x where x is in the range of ⅓ to {fraction (5/3)}.
A substrate having a surface coating of the material, the material comprising:
- single crystalline structures of a silicon compound having a substantially linear response at least over the wave lengths of 1,200 to 1,700 nanometers.
Dependencies are inferred from the claim text.