Electro-optical device and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd., a Japan corporation
InventorsHongyong Zhang, Satoshi Teramoto
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Abstract
To suppress the occurrence of a failure caused by static electricity in the manufacturing process of an active matrix type display device in which an active matrix circuit and peripheral drive circuits are integrated on a glass substrate, a protective capacitor to be connected to a short ring is formed using a semiconductor layer made from the same material as the active layer of a thin film transistor present under the short ring. This protective capacitor has a function to absorb an electric pulse generated in the plasma using process. Discharge patterns are provided to prevent an electric pulse from affecting each circuit.
Claims6
An electro-optical device comprising:
- an active matrix circuit;
- and
- peripheral drive circuits for driving said active matrix circuit, wherein said active matrix circuit and said peripheral drive circuits are provided on a same substrate and surrounded by discharge patterns.
An active matrix type electro-optical device comprising:
- an active matrix circuit arranged on a substrate;
- and
- a capacitor formed adjacent to said active matrix circuit, wherein said capacitor comprising:
- an electrode formed in the same layer and from the same material as a gate electrode of a thin film transistor arranged in said active matrix circuit;
- an insulating film made from a material forming a gate insulating film of the thin film transistor under said electrode of said capacitor;
- and a semiconductor film constituting an active layer of the thin film transistor under said insulating film of said capacitor.
A method for manufacturing an electro-optical device comprising an active matrix circuit and peripheral drive circuits for driving said active matrix circuit, arranged on the same substrate, the method comprising the steps of:
- forming a short ring to be connected to all gate lines and all source lines constituting said active matrix circuit;
- forming impurity regions for thin film transistors arranged in said active matrix circuit by the implantation of impurity ions;
- and
- forming a capacitor in a region of said short ring by implanting impurity ions into a semiconductor layer under said short ring using said short ring as a mask simultaneously with the above step of forming impurity regions.
A method for manufacturing an active matrix type electro-optical device comprising the steps of:
- forming a thin film semiconductor layer under a short ring;
- and
- forming a capacitor using said thin film semiconductor layer.
A method for manufacturing an active matrix type electro-optical device comprising the step of forming a capacitor using a thin film semiconductor layer present under a short ring simultaneously with the step of forming impurity regions for thin film transistors arranged in an active matrix circuit.
Dependencies are inferred from the claim text.