Semiconductor laser element
AssigneeNichia Corporation
InventorsYasunobu Sugimoto, Masanao Ochiai, Akinori Yoneda
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Abstract
To provide a semiconductor laser device which has no ripple and can afford better FFP having a pattern near a Gaussian distribution upon operation at the high output, the semiconductor laser comprising a laminate structure in which a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer different from the first conductive type are laminated in this order, the laminate structure having a waveguide region to guide a light and resonator planes for laser oscillation on both ends, characterized in that the laminate structure has a non-resonator plane on one end side and the non-resonator plane is covered with a shading layer.
Claims30
A semiconductor laser device comprising a laminate structure in which a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer different from the first conductive type are laminated in this order, said laminate structure having a waveguide region to guide a light in one direction and resonator planes for laser oscillation on both ends, characterized in that said laminate structure has a non-resonator plane which is different from the resonator plane on one end side, said non-resonator plain being formed so as to contain a cross-section of said active layer and said cross-section of said active layer of the non-resonator plane is covered with a shading layer.
A semiconductor laser device comprising a laminate structure in which a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer different from the first conductive type are laminated in this order, said laminate structure having a waveguide region to guide a light in one direction and resonator planes for laser oscillation on both ends, characterized in that a side of said laminate structure has a first side containing a cross-section of said active layer, and a second side which is situated nearer said waveguide region than the first side and contains a cross-section of said active layer, and a shading layer is provided on said cross-section of said active layer of the second side.
A semiconductor laser device comprising a laminate structure in which a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer different from the first conductive type are laminated in this order, said laminate structure having a waveguide region to guide a light in one direction and resonator planes for laser oscillation on both ends, characterized in that said laminate structure has a non-resonator plane which is different from said resonator plane on, said non-resonator plain being formed so as to contain a cross-section of said active layer, and
- a side of said laminate structure has a first side containing a cross-section of said active layer, and a second side which is situated nearer said waveguide region than the first side and near the emitting plane, and which contains a cross-section of an active layer, and
- a shading layer is provided on said cross-section of said active layer of at least one of said non-resonator plane and said second side.
A semiconductor laser device comprising a laminate structure in which a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer different from the first conductive type are laminated in this order, said laminate structure having a waveguide region to guide a light in one direction, characterized in that said laminate structure has a shading membrane provided in the vicinity of an emitting part of one end and at least one layer of a light transmittable membrane comprising the same elements as those constituting the shading membrane and having the higher transmittance than that of a shading membrane, said light transmittable membrane being provided between the shading membrane and the laminate structure.
A semiconductor laser device comprising a laminate structure in which a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer different from the first conductive type are laminated in this order, said laminate structure having a waveguide region to guide a light in one direction, characterized in that said laminate structure has a protective membrane on at least one end face which has a first protective membrane and a second protective membrane having the lower light transmittance than that of the first protective membrane.
Dependencies are inferred from the claim text.