Semiconductor laser device and manufacturing method thereof
AssigneeSharp Kabushiki Kaisha
InventorsNobuhiro Ohkubo, Fumie Kunimasa
Life of this patent
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Abstract
A semiconductor laser device, which is made from an AlGaInP-based material, comprising: a first clad layer of a first conductivity type, an active layer and a second clad layer of a second conductivity type that are formed over a semiconductor substrate, wherein a portion of said active layer in an area near a laser resonator end face has a peak wavelength in photoluminescence that is smaller than a peak wavelength in photoluminescence in a portion of said active layer in a laser resonator inner area, and the second clad layer of the second conductivity type located in the area near a laser resonator end face contains As atoms, and a manufacturing method thereof.
Claims15
A semiconductor laser device, which is made from an AlGaInP-based material, comprising:
- a first clad layer of a first conductivity type, an active layer and a second clad layer of a second conductivity type that are formed over a semiconductor substrate,
- wherein a portion of said active layer in an area near a laser resonator end face has a peak wavelength in photoluminescence that is smaller than a peak wavelength in photoluminescence in a portion of said active layer in a laser resonator inner area, and the second clad layer of the second conductivity type located in the area near a laser resonator end face contains As atoms.
A manufacturing method of a semiconductor laser device, comprising the steps of:
- allowing a laminated-layer structure that is made from an AlGaInP-based material and contains a first clad layer of a first conductivity type, an active layer and a second clad layer of a second conductivity type to grow over a semiconductor substrate;
- diffusing As atoms in the second clad layer of the second conductivity type in an area near a laser resonator end face;
- and
- diffusing impurity atoms having the second conductivity, contained in the second clad layer of the second conductivity type in the area near a laser resonator end face, into an active layer so that a portion of said active layer in the area near a laser resonator end face has a peak wavelength in photoluminescence that is smaller than a peak wavelength in photoluminescence in a portion of said active layer in the laser resonator inner area.
Dependencies are inferred from the claim text.