Semiconductor laser element and semiconductor laser
AssigneeFuji Photo Film Co., Ltd.
InventorsToshiaki Kuniyasu, Toshiro Hayakawa, Toshiaki Fukunaga
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Abstract
In a semiconductor laser element having a plurality of semiconductor layers formed on a substrate, a groove-form concave portion is formed on the surface of the substrate opposite to the surface having the semiconductor layers. The concave portion is filled with metal having a higher heat conductivity higher than the substrate. The semiconductor laser element achieves improved heat dissipation characteristics and high reliability even under high-output operation.
Claims22
A semiconductor laser element comprising
- a substrate,
- a plurality of semiconductor layers formed on the substrate, and
- a concave portion formed on one surface of the substrate, said one surface being opposite to the other surface having the semiconductor layers formed thereon, wherein
- the concave portion is filled with a metal having a heat conductivity higher than the substrate.
A semiconductor laser element comprising
- a substrate,
- a plurality of semiconductor layers formed on the substrate, and
- a concave portion formed on at least a part of one surface of the semiconductor layer, said one surface being the surface further from the substrate, wherein
- the concave portion is filled with a metal having a heat conductivity higher than the semiconductor layer.
A semiconductor laser comprising
- a semiconductor laser element,
- a heatsink disposed in contact with the semiconductor laser element,
- a cooling medium passageway formed between the heatsink and the semiconductor laser element, at least a part said heatsink and said semiconductor laser element working as the passageway wall, and
- means for causing a cooling medium to flow through the cooling medium passageway.
A semiconductor laser element comprising
- a GaN substrate equipped with one of a pair of electrodes,
- a semiconductor layer made of a GaN-base semiconductor including at least an active layer, said semiconductor layer disposed on the GaN substrate, and
- the other one of the pair of electrodes disposed on the semiconductor layer, and
- an electric current injection region formed on the semiconductor layer, wherein
- a groove is formed on one surface of the GaN substrate at a region thereon corresponding to the electric current injecting region, said one surface being the surface further from the semiconductor layer, said groove reaching to the depth of the semiconductor layer, and wherein
- said one of the pair of electrodes is formed on the surface of the groove.
Dependencies are inferred from the claim text.