MRAM having SAL layer
AssigneeKabushiki Kaisha Toshiba
InventorKentaro Nakajima
Life of this patent
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Abstract
A second conductive layer is formed above a first conductive layer and arranged substantially perpendicular to the first conductive layer. A plurality of magneto-resistance effect elements are formed between the first and second conductive layers and arranged in the lengthwise direction of the first conductive layer and contain free layers whose spin directions are controlled to be reversed by a resultant magnetic field caused by the first and second conductive layers. A magnetic layer is inserted between the first conductive layer and the magneto-resistance effect elements and causes magnetic interaction with respect to the free layers of the magneto-resistance effect elements.
Claims27
A magnetic memory device comprising:
- a first conductive layer;
- a second conductive layer formed above the first conductive layer and arranged substantially perpendicular to the first conductive layer;
- a plurality of magneto-resistance effect elements formed between the first and second conductive layers, arranged in the lengthwise direction of the first conductive layer and containing free layers whose spin directions are controlled to be reversed by a resultant magnetic field caused by the first and second conductive layers;
- and
- a magnetic layer inserted between the first conductive layer and the magneto-resistance effect element and causing magnetic interaction with respect to the free layers of the magneto-resistance effect element.
A magnetic memory device comprising:
- a first conductive layer;
- a second conductive layer formed above the first conductive layer and arranged substantially perpendicular to the first conductive layer;
- and
- a plurality of magneto-resistance effect elements formed between the first and second conductive layers, arranged in the lengthwise direction of the first conductive layer and containing free layers whose spin directions are controlled to be reversed by a resultant magnetic field caused by the first and second conductive layers;
- wherein the first conductive layer is formed of a soft magnetic body which causes magnetic interaction with respect to the free layers of the magneto-resistance effect elements.
Dependencies are inferred from the claim text.