Semiconductor memory device
AssigneeSeiko Epson Corporation
InventorsKoichi Mizugaki, Eitaro Otsuka
Life of this patent
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Abstract
In a semiconductor memory device equipped with a memory cell array in which dynamic memory cells are arrayed, for example, in a matrix, a technique speeds up of a read operation. In the read cycle, an external access controller outputs an external access execution timing signal which changes to active after the change of the output enable signal to active, and changes to inactive after a start of the latch of the read signal caused by changes of the latch signal to active and inactive. In the read cycle, the refresh controller outputs the refresh execution timing signal which changes to active according to the change of the latch signal to active while the refresh requirement signal is active, and stays active for a predetermined time period.
Claims3
A semiconductor memory device, comprising:
- a memory cell array of dynamic memory cells;
- an external access controller which outputs an external access execution timing signal for indicating an execution timing of an access operation to the memory cell array;
- and
- a refresh controller which outputs a refresh execution timing signal for indicating an execution timing of a refreshing operation to the memory cell array, wherein
- an output enable signal supplied from an external device changes to active in a read cycle;
- a latch signal changes to active and then inactive to indicate latching of a read signal which is read from the memory cell array;
- in the read cycle, the external access execution timing signal
- changes to active triggered by the change of the output enable signal to active;
- and
- changes to inactive triggered by a start of a latch of the read signal caused by changes of the latch signal to active and inactive;
- a refresh requirement signal changes to active to instruct an execution of the refreshing operation to the memory cell array;
- and
- in the read cycle, the refresh execution timing signal
- changes to active according to the change of the latch signal to active while the refresh requirement signal is active;
- and
- stays active for a predetermined time period.
A semiconductor memory device, comprising:
- a memory cell array of dynamic memory cells;
- an external access controller which outputs an external access execution timing signal for indicating an execution timing of an access operation to the memory cell array;
- and
- a refresh controller which outputs a refresh execution timing signal for indicating an execution timing of a refreshing operation to the memory cell array, wherein
- an output enable signal supplied from an external device changes to active in a read cycle;
- a latch signal changes to active and then inactive to indicate latching of a read signal which is read from the memory cell array;
- in the read cycle, the external access execution timing signal
- changes to active according to the change of the output enable signal to active;
- and
- changes to inactive according to a start of a latch of the read signal after changes of the latch signal to active and inactive;
- a refresh requirement signal changes to active to instruct an execution of the refreshing operation to the memory cell array;
- and
- in the read cycle, the refresh execution timing signal
- changes to active according to the change of the output enable signal to inactive while the refresh requirement signal is active;
- and
- stays active for a predetermined time period.
Dependencies are inferred from the claim text.