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US 2004/0165445 A1Published application
Semiconductor nonvolatile storage device
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsKenji Misumi, Atsushi Fujiwara, Masanori Matsuura, Toshio Nishimoto
Life of this patent
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Abstract
A writing operation selecting circuit is provided for selecting a temporary writing operation having a prescribed writing time for a memory cell transistor element and an additional writing operation for the memory cell transistor element. A writing time control circuit is provided for controlling an additional writing operation time by an output signal of the writing operation selecting circuit.
Claims19
A semiconductor nonvolatile storage device comprising:
- a writing operation selecting circuit for selecting a temporary writing operation having a prescribed writing time for a memory cell transistor element and an additional writing operation for the memory cell transistor element;
- and
- a writing time control circuit for controlling the time of the additional writing operation in accordance with the output signal of the writing operation selecting circuit.
A controlling method of writing a semiconductor nonvolatile storage device comprising:
- a step of selecting a temporary writing operation having a prescribed writing time for a memory cell transistor element;
- and
- a step of controlling a time of an additional writing operation in accordance with the selection of the temporary writing operation.
Dependencies are inferred from the claim text.