Semiconductor device and method for driving the same

A method for driving a semiconductor device, the semiconductor device comprising:

• a semiconductor substrate;
• a gate insulating film formed on the semiconductor substrate;
• a floating gate electrode formed on the gate insulating film;
• first conductivity-type source and drain regions formed within the semiconductor substrate at both sides of the floating gate electrode;
• a dielectric capacitor, which is connected to the floating gate electrode and has a dielectric layer;
• a ferroelectric capacitor, which is connected to the floating gate electrode and has a ferroelectric layer;
• and
• first and second polarization voltage application terminals, which are connected to the dielectric capacitor and the ferroelectric capacitor, respectively, and which apply voltage for generating polarization to the ferroelectric capacitor;
• wherein during writing, in accordance with the information “0” or “1” that is to be written, the voltage applied to the first and second polarization voltage application terminals is reversed between high and low.