Magnetic memories having magnetic tunnel junctions in recessed bit lines and/or digit lines and methods of fabricating the same

A magnetic memory comprising:

• a bit line;
• a digit line, wherein the digit line has a recessed portion at an intersection with the bit line;
• and
• a magnetic tunnel junction between the bit line and the digit line, wherein the magnetic tunnel junction is at least partially disposed in the recessed portion of the digit line.

A magnetic memory comprising:

• a digit line;
• a bit line, wherein the bit line and the digit line each have an oppositely recessed portion at an intersection of the digit line and the bit line;
• and
• a magnetic tunnel junction between the bit line and the digit line, wherein the magnetic tunnel junction is at least partially disposed in the recessed portion of the bit line and in the recessed portion of the digit line.

A method for fabricating a magnetic memory comprising:

• forming a digit line;
• forming an first interlayer insulating film on the digit line;
• forming a magnetic tunnel junction on the first interlayer insulating film;
• and
• forming a bit line directly on a first surface of the magnetic tunnel junction, wherein the bit line has a recessed portion at an intersection with the digit line, and wherein the magnetic tunnel junction is at least partially disposed in the recessed portion of the bit line.

A method for fabricating a magnetic memory comprising:

• forming a digit line;
• forming an first interlayer insulating film on the digit line;
• forming a magnetic tunnel junction on the first interlayer insulating film;
• and
• forming a bit line directly on a first surface of the magnetic tunnel junction, wherein the digit line has a recessed portion at an intersection with the bit line, and wherein the magnetic tunnel junction is at least partially disposed in the recessed portion of the digit line.

A method for fabricating a magnetic memory comprising:

• forming a digit line;
• forming an first interlayer insulating film on the digit line;
• forming a magnetic tunnel junction on the first interlayer insulating film;
• and
• forming a bit line directly on a first surface of the magnetic tunnel junction, wherein the bit line and the digit line each have an oppositely recessed portion at an intersection of the bit line and the digit line, and wherein the magnetic tunnel junction is at least partially disposed in the recessed portion of the bit line and in the recessed portion of the digit line.

A magnetic memory comprising:

• a digit line;
• a bit line that intersects the digit line at an intersection, wherein at least one of the bit line and the digit line includes a recessed portion at the intersection;
• and
• a magnetic tunnel junction between the bit line and the digit line, wherein the magnetic tunnel junction is at least partially disposed in the recessed portion.