Magnetic cell and magnetic memory

A magnetic cell comprising:

• a first magnetically fixed part including a first ferromagnetic layer whose magnetization is substantially fixed in a first direction;
• a second magnetically fixed part including a second ferromagnetic layer whose magnetization is substantially fixed in a second direction opposite to the first direction;
• a third ferromagnetic layer provided between the first and the second magnetically fixed part, a direction of magnetization of the third ferromagnetic layer being variable;
• a first intermediate layer provided between the first magnetically fixed part and the third ferromagnetic layer;
• and
• a second intermediate layer provided between the second magnetically fixed part and the third ferromagnetic layer,
• an easy axis of magnetization of the third ferromagnetic layer being substantially in parallel to the first direction,
• at least one of the first and the second magnetically fixed parts including a laminated structure where ferromagnetic layers and at least one nonmagnetic layer are laminated in turn and the ferromagnetic layers are antiferromagnetically coupled via the nonmagnetic layer,
• the first ferromagnetic layer adjoining the first intermediate layer,
• The second ferromagnetic layer adjoining the second intermediate layer, and
• the direction of magnetization of the third ferromagnetic layer being determined under an influence of spin-polarized electrons upon the third ferromagnetic layer by passing a current between the first and the second magnetically fixed parts.

A magnetic memory comprising a memory cell where a plurality of magnetic cells are arranged in a matrix fashion, each of the magnetic cells being separated by an insulator from other memory cells,

• each of the magnetic cells having:
• a first ferromagnetic layer whose magnetization is substantially fixed in a first direction;
• a second ferromagnetic layer whose magnetization is substantially fixed in a second direction opposite to the first direction;
• a third ferromagnetic layer provided between the first and the second ferromagnetic layers, a direction of magnetization of the third ferromagnetic layer being variable;
• a first intermediate layer provided between the first and the third ferromagnetic layers;
• and
• a second intermediate layer provided between the second and the third ferromagnetic layers,
• the direction of magnetization of the third ferromagnetic layer being determined under an influence of spin-polarized electrons upon the third ferromagnetic layer by passing a current between the first and the second ferromagnetic layers.

A magnetic memory comprising a memory cell where a plurality of magnetic cells are arranged in a matrix fashion, each of the magnetic cells being separated by an insulator from other memory cells,

• each of the magnetic cells having:
• a first magnetically fixed part including a first ferromagnetic layer whose magnetization is substantially fixed in a first direction;
• a second magnetically fixed part including a second ferromagnetic layer whose magnetization is substantially fixed in a second direction opposite to the first direction;
• a third ferromagnetic layer provided between the first and the second magnetically fixed part, a direction of magnetization of the third ferromagnetic layer being variable;
• a first intermediate layer provided between the first magnetically fixed part and the third ferromagnetic layer;
• and
• a second intermediate layer provided between the second magnetically fixed part and the third ferromagnetic layer,
• an easy axis of magnetization of the third ferromagnetic layer being substantially in parallel to the first direction,
• at least one of the first and the second magnetically fixed parts including a laminated structure where ferromagnetic layers and at least one nonmagnetic layer are laminated in turn and the ferromagnetic layers are antiferromagnetically coupled via the nonmagnetic layer,
• the first ferromagnetic layer adjoining the first intermediate layer,
• the second ferromagnetic layer adjoining the second intermediate layer, and
• the direction of magnetization of the third ferromagnetic layer being determined under an influence of spin-polarized electrons upon the third ferromagnetic layer by passing a current between the first and the second magnetically fixed parts.