US 2004/0165424 A1Published application

MRAM array with segmented word and bit lines

AssigneeApplied Spintronics Technology, Inc.

InventorDavid Tsang

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Abstract

A method and system for providing and using a magnetic random access memory (MRAM) array are disclosed. The method and system include providing magnetic storage cells, global word lines and global word line segments, of global bit lines and bit line segments, and selection devices. Each word line segment is coupled with at least one global word line such that the word line segments are selectable. Each word line segment is also coupled to a portion of the magnetic storage cells. Each bit line segment is coupled with at least one global bit line such the bit line segments are selectable. Each bit line segment resides in proximity to and is used to write to a portion of the magnetic storage cells. The bit line segments and the word line segments are coupled with and selectable using the plurality of selection devices.

Claims28

Dependent claims

A magnetic random access memory array comprising:

a plurality of magnetic storage cells;
a plurality of global word lines;
a plurality of word line segments, each of the plurality of word line segments being coupled with at least one of the plurality of global word lines such that the plurality of word line segments is selectable, each of the plurality of word line segments being coupled to a first portion of the plurality of magnetic storage cells {Stone, I replaced the “first portion” because otherwise the claim would read that each segment is coupled to all of the magnetic storage cells, which is not correct. Instead, each segment is coupled to some of the magnetic storage cells};
a plurality of global bit lines;
a plurality of bit line segments, each of the plurality of bit line segments being coupled with at least one of the plurality of global bit lines such the plurality of bit line segments is selectable, each of the plurality of bit line segments residing in proximity to a second portion of the plurality of magnetic storage cells to write to the second portion of the plurality of magnetic storage cells {Stone, I put back the “second portion” for the same reason as above. Each bit line segment is only coupled to some of the magnetic storage cells in the memory, not all of them};
and
a plurality of selection devices, the plurality of bit line segments and the plurality of word line segments being coupled with and selectable using the plurality of selection devices.

4 more elements

A method for utilizing a magnetic random access memory array having a plurality of magnetic storage cells and a plurality of global word lines, the method comprising:

(a) in a write mode, driving a word line current through at least one of the plurality of global word lines,
(b) in the write mode, driving at least a portion of the word line current from the at least one of the plurality of global word liens through at least one of a plurality of word line segments, each of the plurality of word line segments being coupled with a portion of the plurality of global word lines such that the plurality of word line segments is separately selectable, each of the plurality of word line segments being coupled to a first portion of the plurality of magnetic storage cells;
(c) in the write mode, driving a bit line current through at least one of a plurality of global bit lines;
and
(d) in the write mode, providing at least a portion of the bit line current through a portion of a plurality of bit line segments, each of the plurality of bit line segments being coupled with at least one of the plurality of global bit lines such that the plurality of bit line segments is selectable, each of the plurality of segments residing in proximity to a second portion of the plurality of magnetic storage cells to write to the second portion of the plurality of magnetic storage cells;
wherein the plurality of bit line segments and the plurality of word line segments are coupled with and selectable using the plurality of selection devices.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application: 10/669,481Filed 23 Sep 2003
Priority: 24 Feb 2003
Published: 26 Aug 2004
Term ends: Not estimatedThe source records don’t support an estimate.

Classification4 codes

G11C 8/14
Arrangements for selecting an address in a digital store: word line organisation; Word line lay-out
G11C 7/18
Arrangements for writing information into, or reading information out from, a digital store: bit line organisation; Bit line lay-out
G11C 11/15
Using thin-film elements: using multiple magnetic layers
G11C
Static stores