Method and system for performing readout utilizing a self reference scheme
AssigneeApplied Spintronics Technology, Inc.
InventorDavid Tsang
Life of this patent
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Abstract
A method and system for reading a magnetic memory including a plurality of magnetic elements is disclosed. The method and system include determining a first resistance of at least one of the plurality of magnetic elements. The method and system also include applying a disturb magnetic field to the magnetic element(s) and determining a second resistance of the magnetic element(s) while the disturb magnetic field is applied. The method and system further include comparing the first resistance to the second resistance. Consequently, the state(s) of the magnetic element(s) can be determined without the use of a separate reference element.
Claims18
A method for reading magnetic memory, the magnetic memory including a plurality of magnetic elements, the method comprising:
- (a) determining a first resistance of at least one of the plurality of magnetic elements;
- and
- (b) disturbing the at least one of the plurality of magnetic elements;
- (c) determining a second resistance of the at least one of the plurality of magnetic elements while the at least one magnetic element is disturbed, the first resistance of the plurality of magnetic elements being determined when the at least one magnetic element is not disturbed;
- and
- (d) comparing the first resistance to the second resistance.
A magnetic memory comprising:
- a plurality of magnetic elements for storing data;
- means for disturbing at least one of the plurality of magnetic elements;
- means for determining a first resistance of at least one of the plurality of magnetic elements without the at least one magnetic element being disturbed and for determining a second resistance while the at least one magnetic element is disturbed;
- and
- means for comparing the first resistance with the second resistance.
A magnetic memory comprising:
- a plurality of magnetic elements:
- at least one conductive line for carrying at least one current;
- and
- a sample and hold circuit coupled with at least one of the plurality of magnetic elements, the sample and hold circuit for holding a first resistance of at least one of the plurality of magnetic elements, and for sampling a second resistance of the at least one magnetic element, the second resistance being measured while the at least one magnetic element is disturbed, the first resistance being measured while the at least one magnetic element is not disturbed;
- a compare circuit for comparing the first resistance and the second resistance are compared to determine a logical state of the at least one of the plurality of magnetic elements.
Dependencies are inferred from the claim text.