Solid-state imaging device, method for manufacturing the same and interline transfer CCD image sensor

Abstract

A solid-state imaging device can be provided by which a signal charge stored in a photodiode can be transferred completely even when a power supply voltage is low. The solid-state imaging device includes: a plurality of pixel cells arranged on a semiconductor substrate; and a driving unit that is provided for driving the plurality of pixel cells. Each of the plurality of pixel cells includes: a photodiode that converts incident light into a signal charge and stores the signal charge; a transfer transistor that is provided for reading out the signal charge stored in the photodiode; and a potential smoothing unit that is formed so as to allow a potential from the photodiode to the transfer transistor to change smoothly.

Dependencies are inferred from the claim text.