Methods to make piezoelectric ceramic thick film array and single elements and devices

At least one piezoelectric element comprising:

• at least one poled and tested piezoelectric element structure having a thickness of 5 μm to 100 μm formed by a deposition process.
• a first electrode deposited on a first surface of the piezoelectric element structure;
• and
• a second electrode deposited on a second surface of the piezoelectric element structure.

A device comprising:

• a piezoelectric element including,
• at least one poled and tested piezoelectric element structure having a thickness of between 5 μm to 100 μm formed by a deposition process,
• a first electrode deposited on a first surface of the at least one piezoelectric element structure,
• a second electrode deposited on a second surface of the at least one piezoelectric element structure;
• and
• a target system to which the poled and tested piezoelectric element is bonded.

A method of producing at least one thick-film element comprising:

• depositing a material onto a surface of at least one first substrate to form at least one thick-film element structure having a thickness of between approximately greater than 10 μm to 1100 μm;
• bonding the at least one thick-film element structure to a second substrate;
• removing the at least one first substrate from the at least one thick-film element structure using a liftoff process using radiation energy including,
• emitting, from a radiation source, a radiation beam through the first substrate to an attachment interface formed between the first substrate and the at least one thick-film element structure at the surface of the first substrate, wherein the first substrate is substantially transparent at the wavelength of the radiation beam, and the radiation beam generates sufficient energy at the interface to break the attachment.