Surface acoustic wave device, method of manufacturing the same, and electronic apparatus
AssigneeSeiko Epson Corporation
InventorMasahiro Oshio
Life of this patent
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Abstract
The present invention provides a surface acoustic wave device using a quasi-longitudinal leaky surface acoustic wave, which is capable of effectively suppressing spurious response and improving a Q value and a CI value. In particular, the present invention relates to a surface acoustic wave device including at least a quartz substrate and IDT electrodes arranged on the quartz substrate and exciting a quasi-longitudinal leaky surface acoustic wave, wherein a standardized electrode thickness t/λ, which standardizes a thickness t of the quartz substrate to an IDT wavelength λ, is set to be 1<t/λ<35, and the quartz substrate is cut out in the Euler angle range (0°, 100 to 150°, 0°).
Claims9
A surface acoustic wave device having a quartz substrate and IDT electrodes arranged on the quartz substrate and exciting a quasi-longitudinal leaky surface acoustic wave,
- a standardized substrate thickness t/λ, which standardizes a thickness t of the quartz substrate to an IDT wavelength λ, being set to be 1<t/λ<35.
A method of manufacturing a surface acoustic wave device, comprising:
- adjusting a thickness of a quartz substrate;
- forming IDT electrodes, which excite a quasi-longitudinal leaky surface acoustic wave, on the thickness-adjusted quartz substrate to obtain a surface acoustic wave element;
- and
- fixing the surface acoustic wave element on a predetermined package;
- wherein, in adjusting the thickness of the quartz substrate, the thickness of the quartz substrate is adjusted such that a standardized substrate thickness t/λ, which standardizes a thickness t of the quartz substrate to an IDT wave λ, satisfies 1<t/λ<35.
A method of manufacturing a surface acoustic wave device, comprising:
- forming IDT electrodes, which excite a quasi-longitudinal leaky surface acoustic wave, on a quartz substrate to obtain a surface acoustic wave element;
- adjusting a thickness of the quartz substrate by shaving a surface of the quartz substrate opposite to the IDT electrode-forming surface;
- and
- fixing the surface acoustic wave element on a predetermined package;
- wherein, in adjusting the thickness of the quartz substrate, the thickness of the quartz substrate is adjusted such that a standardized substrate thickness t/λ, which standardizes a thickness t of the quartz substrate to an IDT wave λ, satisfies 1<t/λ<35.
Dependencies are inferred from the claim text.