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AssigneesRenesas Technology Corp., Hitachi ULSI System Co., Ltd., Hitachi Yonezawa Electronics Co., Ltd.
InventorsNoriyuki Takahashi, Masayuki Suzuki, Kouji Tsuchiya, Takao Matsuura, Takanori Hashizume, Masahiro Ichitani, Kazunari Suzuki, Takafumi Nishita, Kenichi Imura, Takashi Miwa
Estimating the term…
The back side of a strip substrate with plural semiconductor chips mounted thereon is vacuum-chucked to a lower mold half of a mold, and in this state the plural semiconductor chips are sealed with resin simultaneously to form a seal member. Thereafter, the strip substrate and the seal member are released from the mold and are cut into plural semiconductor devices. The semiconductor devices thus obtained are improved in their mounting reliability.
A method of manufacturing a semiconductor device, comprising the steps of:
A method of manufacturing a semiconductor device, comprising the steps of:
A method of manufacturing a semiconductor device, comprising the steps of:
A method of manufacturing a semiconductor device, comprising the steps of:
The method according to claim 41, wherein the conductor patterns are arranged on the first and second surfaces so as to approach each other.
A semiconductor device in which a semiconductor chip mounted on a first surface of a first substrate is sealed with a seal member, wherein a conductor pattern for wiring and a conductor pattern for dummy are formed on each of the first surface of the first substrate and a second surface of the first substrate opposite to the first surface, the conductor pattern for dummy being arranged in an area other than the area where the conductor pattern for wiring is arranged.
A semiconductor device in which a semiconductor chip mounted on a first surface of a first substrate is sealed with a seal member, wherein an insulating film which covers each of the first surface and a second surface of the first substrate is provided also in an area free of any conductor pattern for wiring.
A semiconductor device in which a semiconductor chip mounted on a first surface of a first substrate is seated with a seal member, wherein an insulating film is formed on each of the first surface and a second surface of the first substrate so that the insulating films coated on the first and second surfaces approach each other.
A method of manufacturing a semiconductor device, comprising the steps of:
A method of manufacturing a semiconductor device, comprising the steps of:
Dependencies are inferred from the claim text.