Multi-layered unit

Abstract

A multi-layered unit according to the present invention includes a support substrate formed of a silicon single crystal, a barrier layer formed of silicon oxide on the support substrate, a buffer layer formed on the barrier layer and formed of a dielectric material containing a bismuth layer structured compound oriented in the c axis direction, an electrode layer formed by epitaxially growing a conductive material on the buffer layer and oriented in the c axis direction, and a dielectric layer formed by epitaxially growing a dielectric material containing a bismuth layer structured compound on the electrode layer and oriented in the c axis direction. Since the thus constituted multi-layered unit includes a dielectric layer containing a bismuth layer structured compound oriented in the c axis direction, in the case of, for example, providing an upper electrode on the dielectric layer, thereby fabricating a thin film capacitor, and applying a voltage between the electrode layer and the upper electrode, the direction of an electric field substantially coincides with the c axis of the bismuth layer structured compound contained in the dielectric layer. As a result, since the ferroelectric property of the bismuth layer structured compound contained in the dielectric layer can be suppressed and the paraelectric property thereof can be fully exhibited, it is possible to fabricate an integrated device with a semiconductor by incorporating a thin film capacitor having a small size and large capacity into the support substrate of a silicon single crystal together with other devices such as a field effect transistor, a CPU and the like.

Dependencies are inferred from the claim text.